公开(公告)号：US10090168B2

公开(公告)日：2018-10-02

申请号：US15541812

申请日：2016-01-19

申请人： ZEON CORPORATION

发明人： Hirotoshi Inui

IPC分类号： H01L21/311 ,  C09K13/00 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11556 ,  H01L27/11582

摘要： The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by the formula (1)) that functions as a fluorine radical source under plasma etching conditions, wherein x represents 3 or 4, y represents an integer from 5 to 9, and z represents an integer from 1 to 3. The present invention provides a plasma etching method that can selectively etch the silicon-containing film with respect to the mask, and form a hole or a trench having a good shape within a short time. CxHyFz  (1)

公开(公告)号：US10566208B2

公开(公告)日：2020-02-18

申请号：US16324982

申请日：2017-07-21

申请人： ZEON CORPORATION

发明人： Takaaki Sakurai ,  Hirotoshi Inui

IPC分类号： H01L21/311 ,  H01L21/3065

摘要： A plasma etching method for etching a multilayer laminate in which a silicon oxide film and a silicon nitride film are stacked includes an etching step of plasma etching the silicon oxide film and the silicon nitride film using a gas of a non-bromine-containing fluorocarbon together with a gas of a bromine-containing fluorocarbon compound represented by a compositional formula C3H2BrF3.

公开(公告)号：US20150357200A1

公开(公告)日：2015-12-10

申请号：US14655861

申请日：2013-12-27

申请人： ZEON CORPORATION

发明人： Hirotoshi Inui

IPC分类号： H01L21/311

CPC分类号： H01L21/31116 ,  H01L21/31144

摘要： The present invention is an etching method comprising etching a multilayered laminate film that includes at least one silicon oxide film layer and at least one silicon nitride film layer using an etching gas, the etching method simultaneously etching both the silicon oxide film layer and the silicon nitride film layer, the etching gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1): CxHyFz (wherein x is 4, y is an integer equal to or larger than 4, and z is a positive integer, provided that y+z is 10). According to the present invention, it is possible to etch even a multilayered laminate film while ensuring high selectivity with respect to the mask and an excellent pattern shape, and preventing a situation in which contact holes are clogged by a deposited film.

摘要翻译： 本发明是一种蚀刻方法，包括使用蚀刻气体蚀刻包括至少一个氧化硅膜层和至少一个氮化硅膜层的多层叠层膜，该蚀刻方法同时蚀刻氧化硅膜层和氮化硅 所述蚀刻气体包括由式（1）表示的直链饱和氟代烃化合物：C x H y F z（其中x为4，y为等于或大于4的整数，z为正整数，条件是y + z 是10）。 根据本发明，可以在确保相对于掩模的高选择性和优异的图案形状的同时蚀刻多层叠层膜，并且防止接触孔被沉积膜堵塞的情况。