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公开(公告)号：US10138573B2
公开(公告)日：2018-11-27
申请号：US14787236
申请日：2013-05-16
发明人： Linjian Fu , Penggen Ouyang , Dantao Wang , Mingjie Chen , Gang Shi , Jianwei Cao , Minxiu Qiu , Qingliang Jiang
摘要： The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches.
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2.发明授权公开(公告)号：US09797062B2
公开(公告)日：2017-10-24
申请号：US14787227
申请日：2013-05-16
发明人： Jianwei Cao , Penggen Ouyang , Dantao Wang , Linjian Fu , Mingjie Chen , Gang Shi , Minxiu Qiu
摘要： The present invention aims at providing a zone melting furnace thermal field with a dual power heating function and a heat preservation method. The zone melting furnace thermal field comprises a primary heating coil and an auxiliary heater, wherein the auxiliary heater has a wavy appearance bent repeatedly up and down and forms a circular loop by surrounding in the horizontal direction, wherein both end parts of the auxiliary heater are provided with ports and are connected with an auxiliary heating power supply through cables; and the auxiliary heating power supply is also sequentially connected with a data analysis module and an infrared temperature measuring instrument through single lines. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches, and simultaneously can improve the thermal field distribution in the growth process of 3-6 inch zone-melted silicon single crystals.
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