公开(公告)号：US20240334841A1

公开(公告)日：2024-10-03

申请号：US18375509

申请日：2023-09-30

Applicant: ZHEJIANG LAB

Inventor： LIHUI YANG ,  XIAOHANG ZHANG ,  CHAO ZHANG ,  RAN DUAN ,  ZHIFENG ZHAO ,  DI LI ,  SHILING YU ,  YI FENG

IPC: H10N60/01 ,  C23C14/06 ,  C23C14/35 ,  G01J5/20

CPC classification number: H10N60/0241 ,  C23C14/0641 ,  C23C14/35 ,  G01J5/20 ,  G01J2005/208

Abstract: The present invention discloses the low-stress niobium nitride (NbN) superconducting thin film and preparation method and application thereof. The preparation method includes the following steps: providing the metal Nb target and the Si-based substrates, fixing the Si-based substrate at room temperature, adjusting the mass flow ratio of N2/Ar to 20%-50%, the sputtering power to 50-400 W and the deposition pressure to 3.0-10.0 mTorr, NbN superconducting thin films with a stress range of-500 MPa˜500 MPa and a thickness of 70-150 nm were deposited on Si-based substrates. By synergistically controlling the mass flow rate ratio of N2/Ar, sputtering power, and deposition pressure, low stress NbN superconducting thin films can be easily and efficiently prepared. The stress range of the prepared NbN superconducting thin films meets the preparation requirements of superconducting dynamic inductance detectors, and can be mass-produced.