公开(公告)号：US20080202575A1

公开(公告)日：2008-08-28

申请号：US11949353

申请日：2007-12-03

申请人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

发明人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

IPC分类号： H01L35/34 ,  H01L35/16

CPC分类号： H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

摘要翻译： 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。

公开(公告)号：US08865995B2

公开(公告)日：2014-10-21

申请号：US11949353

申请日：2007-12-03

申请人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

发明人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

IPC分类号： H01L35/34 ,  H01L35/16 ,  H01L35/22

CPC分类号： H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

摘要翻译： 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。