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    METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS
    1.
    发明申请
    METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS 有权
    在纳米结构的热电材料中的高图形方法

    公开(公告)号：US20080202575A1

    公开(公告)日：2008-08-28

    申请号：US11949353

    申请日：2007-12-03

    申请人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    发明人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    IPC分类号： H01L35/34 ,  H01L35/16

    CPC分类号： H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

    摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

    摘要翻译： 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。

    Methods for high figure-of-merit in nanostructured thermoelectric materials
    2.
    发明授权
    Methods for high figure-of-merit in nanostructured thermoelectric materials 有权
    纳米结构热电材料中高品质因数的方法

    公开(公告)号：US08865995B2

    公开(公告)日：2014-10-21

    申请号：US11949353

    申请日：2007-12-03

    申请人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    发明人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    IPC分类号： H01L35/34 ,  H01L35/16 ,  H01L35/22

    CPC分类号： H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

    摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

    摘要翻译： 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。

    THERMOELECTRIC SKUTTERUDITE COMPOSITIONS AND METHODS FOR PRODUCING THE SAME
    3.
    发明申请
    THERMOELECTRIC SKUTTERUDITE COMPOSITIONS AND METHODS FOR PRODUCING THE SAME 审中-公开
    热电滑石组合物及其制造方法

    公开(公告)号：US20140186209A1

    公开(公告)日：2014-07-03

    申请号：US14197525

    申请日：2014-03-05

    申请人： Zhifeng Ren ,  Jian Yang ,  Xiao Yan ,  Qinyu He ,  Gang Chen ,  Qing Hao

    发明人： Zhifeng Ren ,  Jian Yang ,  Xiao Yan ,  Qinyu He ,  Gang Chen ,  Qing Hao

    IPC分类号： H01L35/18

    CPC分类号： H01L35/18

    摘要： Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.

    摘要翻译： 公开了与基于方钴矿的热电材料相关的组合物。 这样的组合物可以产生相对于衍生组合物的一种或多种散装材料具有增强的ZT值的材料。 具有高热电性质的n型和p型方钴矿的热电材料可以包括具有填料原子和/或通过将颗粒（例如纳米颗粒）压实成具有多个颗粒形成的材料的材料，每个颗粒具有 部分具有基于方钴矿的结构。 还公开了形成热电方钴矿的方法，其可以包括使用热压工艺来固结颗粒。 待固结的颗粒可以衍生自（例如研磨），基于方钴矿的散装材料，元素材料，其他非方钴矿基材料或这些材料的组合。