公开(公告)号：US20070254478A1

公开(公告)日：2007-11-01

申请号：US11380528

申请日：2006-04-27

申请人： Zhijiong Luo ,  William Henson ,  Christian Lavoie ,  Huilong Zhu

发明人： Zhijiong Luo ,  William Henson ,  Christian Lavoie ,  Huilong Zhu

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/28097 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for fabricating a silicide gate field effect transistor includes masking a silicon source/drain region prior to forming the silicide gate by annealing a metal silicide forming metal layer contacting a silicon-containing gate. The silicide gate may be either a fully silicided gate or a partially silicided gate. After unmasking the source/drain region a silicide layer may be formed upon the source/drain region, and also upon the partially silicided gate. The second silicide layer and the partially silicided gate also provide a fully silicided gate.

摘要翻译： 一种用于制造硅化物栅极场效应晶体管的方法，包括：在形成硅化物栅极之前，通过使接触含硅栅极的金属硅化物形成金属层退火来掩蔽硅源/漏极区。 硅化物栅极可以是完全硅化的栅极或部分硅化的栅极。 在去掩蔽源/漏区之后，可以在源极/漏极区上形成硅化物层，并且还可以在部分硅化物栅极上形成硅化物层。 第二硅化物层和部分硅化物栅极还提供完全硅化的栅极。

公开(公告)号：US20070212861A1

公开(公告)日：2007-09-13

申请号：US11308108

申请日：2006-03-07

申请人： Dureseti Chidambarrao ,  Sameer Jain ,  William Henson ,  Kern Rim

发明人： Dureseti Chidambarrao ,  Sameer Jain ,  William Henson ,  Kern Rim

IPC分类号： H01L21/425

CPC分类号： H01L21/26506 ,  H01L21/268 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654

摘要： A sheet resistance stabilized recrystallized antimony doped region may be formed within a semiconductor substrate by annealing a corresponding antimony doped amorphized region at a temperature from about 1050° C. to about 1400° C. for a time period from about 0.1 to about 10 milliseconds. Preferably, a laser surface treatment is used. The laser surface treatment preferably uses a solid phase epitaxy. In addition, the antimony doped region may be co-doped with at least one of a phosphorus dopant and an arsenic dopant. The antimony dopant and the laser surface treatment lend sheet resistance stability that is otherwise absent when forming solely phosphorus and/or arsenic doped regions.

摘要翻译： 通过在约1050℃至约1400℃的温度下退火相应的锑掺杂非晶化区域约0.1至约10毫秒的时间，可以在半导体衬底内形成薄片电阻稳定的再结晶锑掺杂区。 优选地，使用激光表面处理。 激光表面处理优选使用固相外延。 此外，锑掺杂区域可以与磷掺杂剂和砷掺杂剂中的至少一种共掺杂。 当仅形成磷和/或砷掺杂区域时，锑掺杂剂和激光表​​面处理提供了薄片电阻稳定性，否则不存在。

公开(公告)号：US20070123042A1

公开(公告)日：2007-05-31

申请号：US11164511

申请日：2005-11-28

申请人： Kern Rim ,  John Ellis-Monaghan ,  Brian Greene ,  William Henson ,  Robert Purtell ,  Clement Wann ,  Horatio Wildman

发明人： Kern Rim ,  John Ellis-Monaghan ,  Brian Greene ,  William Henson ,  Robert Purtell ,  Clement Wann ,  Horatio Wildman

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/84

摘要： Methods of fabricating a semiconductor structure including heterogeneous suicides or germanides located in different regions of a semiconductor structure are provided. The heterogeneous suicides or germanides are formed onto a semiconductor layer, a conductive layer or both. In accordance with the present invention, the inventive methods utilize a combination of sequential deposition of different metals and patterning to form different suicides or germanides in different regions of a semiconductor chip. The method includes providing a Si-containing or Ge layer having at least a first region and a second region; forming a first silicide or germanide on one of the first or second regions; and forming a second silicide or germanide that is compositionally different from the first silicide or germanide on the other region not including the first silicide or germanide, wherein the steps of forming the first and second suicides or germanides are performed sequentially or in a single step.

摘要翻译： 提供了制造半导体结构的方法，其包括位于半导体结构的不同区域中的异质自杀或锗化物。 异质自杀或锗化物形成在半导体层，导电层或两者上。 根据本发明，本发明的方法利用不同金属的顺序沉积和图案化的组合以在半导体芯片的不同区域中形成不同的自杀或锗化物。 该方法包括提供具有至少第一区域和第二区域的含Si或Ge层; 在所述第一或第二区域之一上形成第一硅化物或锗化物; 并且在不包括第一硅化物或锗化锗的另一区域上形成与第一硅化物或锗化物在组成上不同的第二硅化物或锗化物，其中形成第一和第二硅化物或锗化物的步骤依次进行或单步进行。

公开(公告)号：US08029020B2

公开(公告)日：2011-10-04

申请号：US12648347

申请日：2009-12-29

申请人： William Henson ,  Debbie Henson

发明人： William Henson ,  Debbie Henson

IPC分类号： B60S9/04

CPC分类号： B60S9/04

摘要： A trailer jack stand for supporting a trailer comprising: a pedestal stand, where stand attaches to a trailer jack, said stand includes a top connecting section and a pivoting section; a center mount pin, where the mount pin attaches the stand to the jack through the top connecting section; a locking pin, where the locking pin secures the mount pin into place; a platform, where the platform attaches to the bottom of the pivoting section; and a spring assembly, where the spring assembly includes a top pivot pin extending from the top connecting section, a stand pin extending from the pivoting section and a spring attached between the pivot pin and stand pin. The pivoting section is capable of pivoting between a retracted position and an extended position, where in the extended position the stand supports the trailer.

摘要翻译： 一种用于支撑拖车的拖车千斤顶支架，包括：支架，其中支架附接到拖车千斤顶，所述支架包括顶部连接部分和枢转部分; 中心安装销，其中安装销通过顶部连接部分将支架附接到插孔; 锁定销，其中锁定销将安装销固定到位; 平台，其中平台附接到枢转部分的底部; 以及弹簧组件，其中弹簧组件包括从顶部连接部分延伸的顶部枢轴销，从枢转部分延伸的支架销和附接在枢转销和支架销之间的弹簧。 枢转部分能够在缩回位置和延伸位置之间枢转，其中在展开位置，支架支撑拖车。

公开(公告)号：US20070131123A1

公开(公告)日：2007-06-14

申请号：US11675202

申请日：2007-02-15

申请人： William Henson ,  Harold McKay ,  Donald Tatsch

发明人： William Henson ,  Harold McKay ,  Donald Tatsch

IPC分类号： A47J37/12

CPC分类号： A47J37/1214 ,  A23L5/11 ,  A23L7/13 ,  A23L19/19 ,  A47J37/1228 ,  A47J37/1295

摘要： A mold form fryer utilizing a top conveyor that transports snack pieces through a constant velocity oil stream without the need for a bottom mating mold or conveyor. Herein, the form fryer is provided with a top conveyor disposed above a fryer oil pan positioned longitudinally through the fryer. Uncooked snack pieces are provided to the fryer oil pan by a bottom entrance conveyor. Snack pieces, once in oil within the fryer, meet with a top conveyor having convex molding surfaces with product-centering elements. At the exit portion of the fryer, a bottom exit conveyor receives the cooked snack pieces from the top conveyor. As no continuous bottom conveyor is utilized, the fryer oil pan may be provided with a reduced volume segment situated between the bottom entrance and exit conveyors.

摘要翻译： 一种使用顶部输送机的模具式油炸锅，其将零食片通过恒定速度的油流输送，而不需要底部配合的模具或输送机。 这里，形式油炸锅设置有顶部输送机，其设置在纵向穿过油炸锅的油炸锅的上方。 未烹饪的零食通过底部进口输送机提供给油炸锅。 零食一旦在油炸锅内的油中，就会与具有产品定心元件的凸形成型表面的顶部输送机相遇。 在炸炉的出口部分，底部出口输送机从顶部输送机接收烹饪的零食零件。 由于没有使用连续的底部输送机，油炸锅油盘可以设置有位于底部入口和出口输送机之间的减小体积的段。

公开(公告)号：US20070099362A1

公开(公告)日：2007-05-03

申请号：US11263261

申请日：2005-10-31

申请人： Dureseti Chidambarrao ,  William Henson

发明人： Dureseti Chidambarrao ,  William Henson

IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L21/28518 ,  H01L21/2254 ,  H01L21/2652 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/665

摘要： A method for making a semiconductor device structure includes producing a substrate having formed thereon a gate with spacers, respective source and drain regions adjacent to the gate and an; disposing a first metallic layer on the gate with spacers, and the source and drain regions, disposing a second metallic layer on the first metallic layer; doping the first metallic layer with a first dopant through a portion of the second metal layer disposed over the second gate with spacers; and then heating the intermediate structure to a temperature and for a time sufficient to form a silicide of the first metallic layer. This first layer is, for example, Ni while the second layer is, for example, TiN.

摘要翻译： 制造半导体器件结构的方法包括制造其上形成有栅极的衬底的衬底，与栅极相邻的相应的源极和漏极区域; 在栅极上用间隔物和源区和漏区设置第一金属层，在第一金属层上设置第二金属层; 通过设置在第二栅极上的第二金属层的一部分用间隔物掺杂第一金属层与第一掺杂剂; 然后将中间结构加热到足以形成第一金属层的硅化物的温度和时间。 该第一层例如为Ni，而第二层为例如TiN。

公开(公告)号：US07574390B1

公开(公告)日：2009-08-11

申请号：US10805063

申请日：2004-03-19

申请人： William Henson ,  Robert Jakacki ,  Norton Reamer ,  Alexander von York

发明人： William Henson ,  Robert Jakacki ,  Norton Reamer ,  Alexander von York

IPC分类号： G06Q40/00

CPC分类号： G06Q40/06 ,  G06Q40/025

摘要： In an embodiment of a method of financing an entity, such as an asset management firm, a financing provider invests assets in the entity. The financing provider receives a revenue share interest in the financed entity. No ownership interest in the entity is given to the financing provider during the term of the revenue share interest, and no debt is used. To evaluate and price the investment, a revenue forecasting model may be used.

摘要翻译： 在资产管理公司等实体的融资方式中，融资提供者将资产投资于该实体。 融资提供者收到融资实体的收益份额。 在收益分担利息期间，不向该融资提供者提供该实体的所有者权益，且不使用任何债务。 为了评估和评估投资，可以使用收入预测模型。

公开(公告)号：US20070235759A1

公开(公告)日：2007-10-11

申请号：US11401672

申请日：2006-04-11

申请人： William Henson ,  Yaocheng Liu ,  Alexander Reznicek ,  Kern Rim ,  Devendra Sadana

发明人： William Henson ,  Yaocheng Liu ,  Alexander Reznicek ,  Kern Rim ,  Devendra Sadana

IPC分类号： H01L31/00

CPC分类号： H01L21/2807 ,  H01L21/823842

摘要： An integration scheme for providing Si gates for nFET devices and SiGe gates for pFET devices on the same semiconductor substrate is provided. The integration scheme includes first providing a material stack comprising, from bottom to top, a gate dielectric, a Si film, and a hard mask on a surface of a semiconductor substrate that includes at least one nFET device region and at least one pFET device region. Next, the hard mask is selectively removed from the material stack in the at least one pFET device region thereby exposing the Si film. The exposed Si film is then converted into a SiGe film and thereafter at least one nFET device is formed in the least one nFET device region and at least one pFET device is formed in the at least one pFET device region. In accordance with the present invention, the least one nFET device includes a Si gate and the at least one pFET includes a SiGe gate.

摘要翻译： 提供了用于在同一半导体衬底上为pFET器件提供nFET器件的Si栅极和SiGe栅极的集成方案。 该集成方案包括首先提供材料堆叠，其从底部到顶部包括在半导体衬底的表面上的栅极电介质，Si膜和硬掩模，其包括至少一个nFET器件区域和至少一个pFET器件区域 。 接下来，将硬掩模从至少一个pFET器件区域中的材料堆叠中选择性地去除，从而暴露Si膜。 暴露的Si膜然后被转换成SiGe膜，此后在至少一个nFET器件区域中形成至少一个nFET器件，并且在至少一个pFET器件区域中形成至少一个pFET器件。 根据本发明，至少一个nFET器件包括Si栅极，并且至少一个pFET包括SiGe栅极。

公开(公告)号：US20070122965A1

公开(公告)日：2007-05-31

申请号：US11668790

申请日：2007-01-30

申请人： Dureseti Chidambarrao ,  William Henson ,  Kern Rim ,  William Wille

发明人： Dureseti Chidambarrao ,  William Henson ,  Kern Rim ,  William Wille

IPC分类号： H01L21/8238

CPC分类号： H01L27/1203 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/0653 ,  H01L29/7842

摘要： A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.

公开(公告)号：US20050019463A1

公开(公告)日：2005-01-27

申请号：US10918281

申请日：2004-08-13

申请人： William Henson ,  Harold McKay ,  Donald Tatsch

发明人： William Henson ,  Harold McKay ,  Donald Tatsch

IPC分类号： A47J37/12 ,  A23L1/00

CPC分类号： A47J37/1214 ,  A23L5/11 ,  A23L7/13 ,  A23L19/19 ,  A47J37/1228 ,  A47J37/1295

摘要： A mold form fryer utilizing a top conveyor that transports snack pieces through a constant velocity oil stream without the need of a bottom mating mold or conveyor. Herein, the form fryer is provided with a top conveyor disposed above a fryer oil pan positioned longitudinally through the fryer. Uncooked snack pieces are provided to the fryer oil pan by a bottom entrance conveyor. Snack pieces, once in oil within the fryer, meet with a top conveyor having convex molding surfaces with product-centering elements. At the exit portion of the fryer, a bottom exit conveyor receives the cooked snack pieces from the top conveyor. As no continuous bottom conveyor is utilized, the fryer oil pan may be provided with a reduced volume segment situated between the bottom entrance and exit conveyors.

摘要翻译： 一种使用顶部输送机的模具式油炸锅，其将零食片通过恒速油流输送，而不需要底部配合的模具或输送机。 这里，形式油炸锅设置有顶部输送机，其设置在纵向穿过油炸锅的油炸锅的上方。 未烹饪的零食通过底部进口输送机提供给油炸锅。 零食一旦在油炸锅内的油中，就会与具有产品定心元件的凸形成型表面的顶部输送机相遇。 在炸炉的出口部分，底部出口输送机从顶部输送机接收烹饪的零食零件。 由于没有使用连续的底部输送机，油炸锅油盘可以设置有位于底部入口和出口输送机之间的减小体积的段。