IMPLANT METHOD AND IMPLANTER BY USING A VARIABLE APERTURE
    1.
    发明申请
    IMPLANT METHOD AND IMPLANTER BY USING A VARIABLE APERTURE 有权
    使用可变孔径的植入方法和植入物

    公开(公告)号:US20110233431A1

    公开(公告)日:2011-09-29

    申请号:US12748877

    申请日:2010-03-29

    IPC分类号: H01J37/317 H01J37/02

    摘要: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

    摘要翻译: 在通过成形离子束注入衬底之前,使用孔装置内的可变孔径来形成离子束,特别是最终在离开衬底前方的位置形成离子束。 因此,可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分,而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说,可以通过定制的离子束分别实现不同的注入,而不需要高成本(使用多个固定孔径器件)和复杂的操作(每次重新调整离子束)。 此外,可以加速用于获取要注入的特定离子束的光束调整过程,以便每次都比使用多个固定孔径和/或重新调整离子束更快,因为可以实现可变孔径的调节 简单地通过机械操作。

    APPARATUS AND METHOD FOR MEASURING ION BEAM CURRENT
    2.
    发明申请
    APPARATUS AND METHOD FOR MEASURING ION BEAM CURRENT 有权
    测量离子束电流的装置和方法

    公开(公告)号:US20130057250A1

    公开(公告)日:2013-03-07

    申请号:US13227425

    申请日:2011-09-07

    IPC分类号: G01N27/62

    CPC分类号: G01N27/62 G01R19/0061

    摘要: Techniques for measuring ion beam current, especially for measuring low energy ion beam current, are disclosed. The technique may be realized as an ion beam current measurement apparatus having at least a planar Faraday cup and a voltage assembly. The planar Faraday cup is located close to an inner surface of a chamber wall, and intersects an ion beam path. The voltage assembly is located outside a chamber having the chamber wall. Therefore, by properly adjusting the electric voltage applied on the planar Faraday cup by the voltage assembly, some undesired charged particles may be adequately suppressed. Further, the planar Faraday cup may surround an opening of an additional Faraday cup being any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of the planar Faraday cup on the ion beam path.

    摘要翻译: 公开了用于测量离子束电流的技术,特别是用于测量低能量离子束电流的技术。 该技术可以被实现为具有至少一个平面法拉第杯和电压组件的离子束电流测量装置。 平面法拉第杯位于靠近室壁的内表面并与离子束路相交。 电压组件位于具有室壁的室外。 因此,通过适当地调整通过电压组件施加在平面法拉第杯上的电压,可以充分抑制一些不期望的带电粒子。 此外,平面法拉第杯可以围绕任何常规法拉第杯的附加法拉第杯的开口。 因此,可以通过离子束路径上的平面法拉第杯的较大的横截面面积良好地接收和测量整个离子束。