公开(公告)号：US09870896B2

公开(公告)日：2018-01-16

申请号：US14099672

申请日：2013-12-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Po-Feng Tsai ,  Chia-Tong Ho ,  Chia-Hsing Liao ,  Sheng-Wei Lee ,  Jo-Fei Wang ,  Jong-I Mou

IPC分类号： H01J37/317 ,  H01J37/304

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/30455 ,  H01J2237/31711

摘要： A system, a method, and a non-transitory computer readable storage medium for controlling an ion implanter are disclosed herein. The system includes a sample module and a control module. The sample module is configured to generate a summarized value from process data of the ion implanter, and the process data correspond to a control parameter. The control module is configured to tune a control parameter, and the control module performs an ion implantation by releasing tools of the ion implanter in accordance with the control parameter when the summarized value meets a predetermined stability requirement.

公开(公告)号：US09863032B2

公开(公告)日：2018-01-09

申请号：US14551264

申请日：2014-11-24

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Kevin M. Daniels ,  Russell J. Low ,  Nicholas P. T. Bateman ,  Benjamin B. Riordon

IPC分类号： H01J37/08 ,  C23C14/04 ,  H01J37/317 ,  H01L21/266 ,  C23C14/48

CPC分类号： C23C14/042 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/303 ,  H01J2237/31711 ,  H01L21/266

摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.

公开(公告)号：US20170125213A1

公开(公告)日：2017-05-04

申请号：US15197940

申请日：2016-06-30

申请人： Board of Trustees of Michigan State University

发明人： Wolfgang Bauer ,  Bradley Sherrill

IPC分类号： H01J37/317 ,  H01J37/30

CPC分类号： G21H5/02 ,  B42D25/405 ,  G01N2458/15 ,  G09F3/00 ,  G21G1/0005 ,  G21G1/10 ,  H01J2237/31711 ,  H04W12/00 ,  H05H2277/12 ,  Y10T428/24802

摘要： A method of assisting with authenticating a workpiece is provided. In another aspect, ions are generated, accelerated in an accelerator, an isotope is created, and then the isotope is implanted within a workpiece to assist with authenticating of the workpiece. A further aspect includes a workpiece substrate, a visual marker and an isotope internally located within the substrate adjacent the visual marker.

公开(公告)号：US09437392B2

公开(公告)日：2016-09-06

申请号：US13662110

申请日：2012-10-26

申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

发明人： William T. Weaver ,  Charles T. Carlson ,  Joseph C. Olson ,  James Buonodono ,  Paul Sullivan

IPC分类号： H01J37/00 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/266 ,  H01L21/67 ,  H01L31/18

CPC分类号： H01J37/20 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/31711 ,  H01L21/266 ,  H01L21/67213 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.

摘要翻译： 该离子注入机的一个实施例包括离子源和处理室。 该处理室与离子源连接并通过多个提取电极与离子源分离。 托架支撑多个工件。 处理室中的掩模加载器将掩模连接到载体。 传送室和加载锁可以连接到处理室。 离子注入机被配置为执行工件的橡皮布或选择性植入。

公开(公告)号：US09196489B2

公开(公告)日：2015-11-24

申请号：US13750287

申请日：2013-01-25

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Vikram Bhosle ,  Bon-Woong Koo

IPC分类号： H01L21/265 ,  H01J37/08 ,  H01L31/18 ,  H01L31/068 ,  H01J27/02

CPC分类号： H01L21/26513 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31711 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of tailoring the dopant profile of a workpiece by modulating one or more operating parameters is disclosed. In one embodiment, the workpiece may be a solar cell and the desired dopant profile may include a heavily doped surface region and a highly doped region. These two regions can be generated by varying one or more of the parameters of the ion implanter. For example, the extraction voltage may be changed to affect the energy of the implanted ions. The ionization energy can be changed to affect the species of ions being generated from the source gas. In another embodiment, the source gasses that are ionized may be changed to affect the species being generated. After the implant has been performed, thermal processing is performed which minimizes the diffusion of the ions in the workpiece.

摘要翻译： 公开了一种通过调制一个或多个操作参数来调整工件的掺杂物轮廓的方法。 在一个实施例中，工件可以是太阳能电池，并且期望的掺杂剂分布可以包括重掺杂的表面区域和高掺杂区域。 可以通过改变离子注入机的一个或多个参数来产生这两个区域。 例如，可以改变提取电压以影响注入的离子的能量。 可以改变电离能以影响从源气体产生的离子的种类。 在另一个实施方案中，可以改变电离的源气体以影响所产生的物质。 在进行了植入物之后，进行热处理，其使离子在工件中的扩散最小化。

公开(公告)号：US08907307B2

公开(公告)日：2014-12-09

申请号：US13046239

申请日：2011-03-11

申请人： Christopher J. Leavitt ,  Ludovic Godet ,  Timothy J. Miller

发明人： Christopher J. Leavitt ,  Ludovic Godet ,  Timothy J. Miller

IPC分类号： H01J3/14 ,  H01J37/302 ,  H01J37/317 ,  H01J37/32

CPC分类号： H01J37/3172 ,  H01J37/3023 ,  H01J37/32009 ,  H01J37/32137 ,  H01J37/32376 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/31711

摘要： A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.

摘要翻译： 在离子注入系统中植入工件的方法。 该方法可以包括提供与含有等离子体的等离子体室相邻的提取板，使得提取板通过至少一个孔提取离子，等离子体提供离子束，离子束具有分布在入射角范围内的离子 工件。 该方法可以包括相对于提取板扫描工件并且在从第一功率水平到第二功率水平的扫描期间改变等离子体的功率水平，其中在工件的表面处具有第一光束宽度 功率水平大于第二功率水平的第二波束宽度。

公开(公告)号：US08716682B2

公开(公告)日：2014-05-06

申请号：US13079369

申请日：2011-04-04

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

IPC分类号： H05H1/24

CPC分类号： H01J37/3023 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32752 ,  H01J2237/31711

摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.

摘要翻译： 离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。 该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束 轮廓与从第二孔提取的第二离子束不同。

公开(公告)号：US20130186457A1

公开(公告)日：2013-07-25

申请号：US13626707

申请日：2012-09-25

申请人： LG Electronics Inc.

发明人： Gyeayoung KWAG ,  Sungbong MA ,  Sungyeon CHO ,  Myungjun SHIN ,  Taeyoung KWON ,  Haejong CHO

IPC分类号： H01L31/065 ,  H01L31/18

CPC分类号： H01J37/3171 ,  H01J37/317 ,  H01J2237/31703 ,  H01J2237/31711 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell, a solar cell manufacturing device, and a method for manufacturing the solar cell are discussed. The solar cell manufacturing device includes a chamber; an ion implantation unit configured to implant ions into a substrate inside the chamber and a mask positioned between the ion implantation unit and the substrate. The mask includes a first opening to form a lightly doped region having a first concentration at one surface of the substrate, a second opening to form a heavily doped region having a second concentration higher than the first concentration at the one surface of the substrate, and at least one connector formed to cross the second opening. The second opening includes finger openings formed in a first direction, and bus openings formed in a second direction crossing the first direction.

摘要翻译： 讨论太阳能电池，太阳能电池制造装置和太阳能电池的制造方法。 太阳能电池制造装置包括：室; 离子注入单元，被配置为将离子注入到腔室内的衬底中，以及掩模，其位于离子注入单元和衬底之间。 掩模包括第一开口以形成在衬底的一个表面处具有第一浓度的轻掺杂区域，第二开口以形成在衬底的一个表面处具有高于第一浓度的第二浓度的重掺杂区域，以及 形成为穿过第二开口的至少一个连接器。 第二开口包括沿第一方向形成的指形开口和沿与第一方向交叉的第二方向形成的总线开口。

公开(公告)号：US08378318B1

公开(公告)日：2013-02-19

申请号：US13299682

申请日：2011-11-18

申请人： George Gammel ,  Benjamin Riordon

发明人： George Gammel ,  Benjamin Riordon

IPC分类号： H01J37/317 ,  H01J37/30 ,  G01K1/02

CPC分类号： H01J37/20 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31711 ,  H01L21/266 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A mask or set of masks is disclosed in which outward projections are placed on either side of at least one aperture. An ion beam is then directed through the mask toward a workpiece. An ion collecting device or an optical system is then used to measure the alignment of the mask to the ion beam. These projections serve to increase the sensitivity of the system to misalignment. In another embodiment, a blocker is used to create a region of the workpiece that is not subjected to a blanket implant. This facilitates the use of optical means to insure and determine alignment of the mask to the ion beam.

摘要翻译： 公开了一种掩模或一组掩模，其中向外的突起被放置在至少一个孔的任一侧上。 然后将离子束通过掩模朝向工件引导。 然后使用离子收集装置或光学系统来测量掩模与离子束的对准。 这些投影用于提高系统对准偏差的灵敏度。 在另一个实施例中，阻挡器用于产生不经受橡皮布植入的工件的区域。 这有助于使用光学装置来确保并确定掩模与离子束的对准。

公开(公告)号：US20120248328A1

公开(公告)日：2012-10-04

申请号：US13079369

申请日：2011-04-04

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

IPC分类号： H01J3/14 ,  G21G5/00

CPC分类号： H01J37/3023 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32752 ,  H01J2237/31711

摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.

摘要翻译： 离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。 该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束 轮廓与从第二孔提取的第二离子束不同。