公开(公告)号：US20120119298A1

公开(公告)日：2012-05-17

申请号：US12944104

申请日：2010-11-11

申请人： Zhiqiang WU ,  Yi-Ming SHEU ,  Tsung-Hsing YU ,  Kuan-Lun CHENG ,  Chih-Pin TSAO ,  Wen-Yuan CHEN ,  Chun-Fu CHENG ,  Chih-Ching WANG

发明人： Zhiqiang WU ,  Yi-Ming SHEU ,  Tsung-Hsing YU ,  Kuan-Lun CHENG ,  Chih-Pin TSAO ,  Wen-Yuan CHEN ,  Chun-Fu CHENG ,  Chih-Ching WANG

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823468 ,  H01L29/66492 ,  H01L29/66545 ,  H01L29/66575

摘要： A method of forming an integrated circuit includes forming a plurality of gate structures longitudinally arranged along a first direction over a substrate. A plurality of angle ion implantations are performed to the substrate. Each of the angle ion implantations has a respective implantation angle with respect to a second direction. The second direction is substantially parallel with a surface of the substrate and substantially orthogonal to the first direction. Each of the implantation angles is substantially larger than 0°.

摘要翻译： 形成集成电路的方法包括：在衬底上形成沿着第一方向纵向布置的多个栅极结构。 对基板执行多个角度离子注入。 每个角度离子注入相对于第二方向具有相应的注入角度。 第二方向基本上平行于衬底的表面并且基本上与第一方向正交。 每个注入角度基本上大于0°。