公开(公告)号：US06517235B2

公开(公告)日：2003-02-11

申请号：US09867560

申请日：2001-05-31

申请人： Zhong Yun Zhu ,  Rajneesh Jaiswal ,  Haznita Abd Karim ,  Bei Chao Zhang ,  Johnny Cham ,  Ravi Sankar Yelamanchi ,  Chee Kong Leong

发明人： Zhong Yun Zhu ,  Rajneesh Jaiswal ,  Haznita Abd Karim ,  Bei Chao Zhang ,  Johnny Cham ,  Ravi Sankar Yelamanchi ,  Chee Kong Leong

IPC分类号： G01K1700

CPC分类号： G01K15/002

摘要： A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems. The temperature point depend upon the type of refractory metal used and can range from about 200 to 800 ° C.

摘要翻译： 描述了用于控制和/或校准快速热处理系统的方法。 包括其上具有难熔金属层的硅半导体衬底的一个或多个晶片在不同温度的RTP系统中被硅化。 测量晶片的片电阻均匀性，从而检测最高均匀点处的硅化相变温度点。 温度点用于校准或复位RTP系统。 包括其上具有难熔金属层的硅半导体衬底的多个晶片可以在多个快速热处理系统中的每一个中被硅化。 测量每个晶片的薄片电阻均匀性，从而通过每个RTP系统的最高薄层电阻均匀性来检测硅化相变温度点。 温度点用于匹配每个RTP系统的温度。 温度点取决于使用的难熔金属的类型，可以在约200至800℃的范围内