摘要:
Optical cavities in a stacked organic light emitting device (SOLEDs) can shift or attenuate the light emitted by the individual organic light emitting devices (OLEDs) in the stack. Interference caused by reflections within the stack, absorption, positioning of the light source, and the polarization of the emitted light can all determine how the spectra of the emitted light are affected by the SOLED structure. A detailed model that provides a good fit to measured SOLED emissions can be used to predict how a SOLED will affect light emitted by OLEDs. As a result, SOLED geometries that will optimize color saturation and external quantum efficiency can be predicted.
摘要:
Optical cavities in a stacked organic light emitting device (SOLEDS) can shift or attenuate the light emitted by the individual organic light emitting devices (OLEDs) in the stack. Interference caused by reflections within the stack, absorption, positioning of the light source, and the polarization of the emitted light can all determine how the spectra of the emitted light are affected by the SOLED structure. A detailed model that provides a good fit to measured SOLED emissions can be used to predict how a SOLED will affect light emitted by OLEDs. As a result, SOLED geometries that will optimize color saturation and external quantum efficiency can be predicted.
摘要:
A method is disclosed for fabricating organic light emitting devices (OLEDS) containing an indium tin oxide (ITO) layer that is deposited onto a fragile layer. The ITO layer is fabricated using a low, non-damaging, ITO deposition rate until a protective ITO layer is formed, at which point the ITO deposition rate is increased to a substantially higher deposition rate without causing damage to the underlying layers. OLEDs fabricated using the accelerated ITO deposition rate could be made with I-V characteristics having no practically discernible difference from the I-V characteristics of an OLED in which the ITO deposition rate was kept at a low deposition rate throughout the ITO deposition process.
摘要:
An organic light emitting device (OLED) is disclosed for which the hole transporting layer, the electron transporting layer and/or the emissive layer, if separately present, is comprised of a non-polymeric material. A method for preparing such OLED's using vacuum deposition techniques is further disclosed.
摘要:
An optically-pumped laser having a small-molecule thin organic film of DCM doped Alq3. Carrier transport properties of the small-molecule organic materials, combined with a low lasing threshold provide a new generation of diode lasers employing organic thin films. An electrically-pumped variant is also described.
摘要:
A high contrast organic light emitting device (OLED) display utilizing a transparent (TOLED) display structure with a low-reflectance absorber arranged behind the display. The TOLED display allows substantially all light incident on the display to pass through the display and to be absorbed by the low-reflectance absorber With the amount of light reflected by the display thus substantially reduced, the contrast of images displayed by the display is thus improved.
摘要:
An organic light emitting device (OLED) is disclosed for which the hole transporting layer, the electron transporting layer and/or the emissive layer, if separately present, is comprised of a non-polymeric material. A method for preparing such OLED's using vacuum deposition techniques is further disclosed.
摘要:
An organic light emitting device (OLED) is disclosed for which the hole transporting layer, the electron transporting layer and/or the emissive layer, if separately present, is comprised of a non-polymeric material. A method for preparing such OLED's using vacuum deposition techniques is further disclosed.
摘要:
Dopant compounds of Formula I below for use in organic light emitting devices (OLED's) as device elements capable of emitting light of wavelengths associated with saturated red emissions. OLED's utilize device elements comprising the above compounds and display devices are based on those OLED's.
摘要:
Organic light emitting devices are disclosed which include a heterostructure for producing electroluminescence wherein the heterostructure includes a non-metallic cathode. As a representative embodiment of the present invention, the heterostructure for producing electroluminescence includes in order, a non-metallic cathode layer (1), an electron injecting interface layer (6), an electron transporting layer (2), a hole transporting layer (3), and an anode layer (4); wherein the non-metallic cathode layer (1) includes an indium-tin oxide layer in contact with a copper phthalocyanine layer which functions as the electron injecting interface layer (6).