公开(公告)号：US20070183186A1

公开(公告)日：2007-08-09

申请号：US10599514

申请日：2004-12-01

申请人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

发明人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

摘要翻译： 本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成， 电流垂直于MFC单元并通过本机。 这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本 处理。

公开(公告)号：US07480171B2

公开(公告)日：2009-01-20

申请号：US10599514

申请日：2004-12-01

申请人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

发明人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

IPC分类号： G11C7/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

摘要翻译： 本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成， 电流垂直于MFC单元并通过本机。 这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本 处理。

公开(公告)号：US20190060840A1

公开(公告)日：2019-02-28

申请号：US16125949

申请日：2018-09-10

申请人： John Fortner ,  Pratim Biswas ,  Yi Jiang ,  Weining Wang

发明人： John Fortner ,  Pratim Biswas ,  Yi Jiang ,  Weining Wang

IPC分类号： B01D69/14 ,  C01B32/20 ,  C02F1/44 ,  B01D69/12 ,  B82Y30/00 ,  B01D71/02 ,  B82Y40/00

摘要： Composite nanostructures having a crumpled graphene oxide shell and a nanoparticle selected from titanium dioxide, silver and magnetite within the shell are disclosed. The nanostructures may be incorporated into a filtration membrane suitable for purifying water for targeted separations and for human consumption.