公开(公告)号：US20210164831A1

公开(公告)日：2021-06-03

申请号：US17263244

申请日：2019-07-26

Applicant: ams AG

Inventor： Gerhard EILMSTEINER ,  Desislava OPPEL ,  Deborah MORECROFT ,  Jens HOFRICHTER

IPC: G01J1/04 ,  G01J3/02 ,  G01J3/51 ,  G01T1/20 ,  G02B5/28

Abstract: A filter assembly includes comprises an incident medium, a spacer, at least one dielectric filter and an exit medium. The spacer is arranged between the incident medium and the at least one dielectric filter such that the incident medium and the at least one dielectric filter are spaced apart by a working distance and thereby enclose a medium of lower index of refraction than the incident medium. The at least one dielectric filter is arranged on the exit medium.

公开(公告)号：US20220359594A1

公开(公告)日：2022-11-10

申请号：US17634665

申请日：2020-07-21

Applicant: ams AG

Inventor： Patrik PERTL ,  Gerhard EILMSTEINER

IPC: H01L27/146 ,  G02B1/116

Abstract: An optoelectronic device comprises a substrate with a photosensitive structure, a dielectric layer on a main surface of the substrate, the dielectric layer having a top surface facing away from the substrate. At least one wiring layer is arranged in the dielectric layer in places and at least one contact area is formed by a portion of the at least one wiring layer. An opening is formed at the top surface of the dielectric layer, the opening extending towards the contact area. An optical element is arranged on the top surface of the dielectric layer above the photosensitive structure and an optical filter is arranged on the top surface of the dielectric layer, the optical filter being electrically conductive, covering a portion of the optical element and being in electrical contact with the contact area. Furthermore, a method for producing an optoelectronic device is provided.

公开(公告)号：US20210366977A1

公开(公告)日：2021-11-25

申请号：US16772360

申请日：2018-12-06

Applicant: ams AG

Inventor： Gerhard EILMSTEINER ,  Hannes BRANDNER

IPC: H01L27/146 ,  G02B3/00

Abstract: A resist layer is applied on a carrier, an opening with an overhanging or re-entrant sidewall is formed in the resist layer, the carrier being uncovered in the opening, a lens material is deposited, thus forming a lens on the carrier in the opening, and the resist layer is removed.

公开(公告)号：US20210199768A1

公开(公告)日：2021-07-01

申请号：US17057631

申请日：2019-05-20

Applicant: ams AG

Inventor： Matt KROESE ,  Gerhard EILMSTEINER ,  Josef KRIEBERNEGG ,  Desislava OPPEL

IPC: G01S7/481 ,  G01S17/04

Abstract: An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.

公开(公告)号：US20160179009A1

公开(公告)日：2016-06-23

申请号：US14910670

申请日：2014-07-25

Applicant: AMS AG

Inventor： Gerhard EILMSTEINER ,  Raimund HOFFMANN

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/2022 ,  G03F1/50 ,  G03F1/54 ,  G03F7/168 ,  G03F7/20 ,  G03F7/32

Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

Abstract translation: 该方法包括以下步骤：在底层上施加负性光致抗蚀剂层，为负光致抗蚀剂层提供布置在要制备的抗蚀剂结构的边界区域中的图案，照射所述层的 根据要制造的抗蚀剂结构的负性光致抗蚀剂，以及去除在照射的表面区域外的负性光致抗蚀剂层。 以这样的方式产生图案，使得其包括小于照射的最小分辨率的尺寸。 该图案可以特别地被设计为子分辨率辅助特征。

公开(公告)号：US20220216244A1

公开(公告)日：2022-07-07

申请号：US17601914

申请日：2020-04-04

Applicant: ams AG

Inventor： Gerhard EILMSTEINER ,  Hannes BRANDNER ,  Patrik PERTL

IPC: H01L27/144 ,  H01L23/00

Abstract: An apparatus includes an optical device (22) and an electrically conductive bond pad (32). A multi-layer stack (42,44,46) of electrically conductive materials is disposed on the bond pad (32). An ITO layer (48) is disposed at least partially on the optical device (22) and makes ohmic contact with the multi-layer stack (42,44,46).

公开(公告)号：US20180372546A1

公开(公告)日：2018-12-27

申请号：US16062089

申请日：2016-11-29

Applicant: ams AG

Inventor： Hubert ENICHLMAIR ,  Gerhard EILMSTEINER

IPC: G01J3/51 ,  G01J3/26 ,  G01J3/28 ,  G02B5/28

Abstract: An optical sensing device comprises a substrate carrying a first and a second photodetector stack comprises a band-pass filter, a decoupling layer arranged on the band-pass filter and a lower dielectric mirror arranged on the decoupling layer. The filter stack comprises a spacer stack with a primary spacer layer arranged on the lower dielectric mirror, comprising a first dielectric material and covering the photodetector array. The spacer stack comprises a first spacer layer comprising the first dielectric material, wherein a first segment of the first spacer layer is arranged on the primary spacer layer and covers the second photodetector but not the first photodetector. The filter stack comprises an upper dielectric mirror arranged on the spacer stack.