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公开(公告)号：US20240136800A1
公开(公告)日：2024-04-25
申请号：US18546593
申请日：2022-01-27
Applicant: ams-OSRAM International GMBH
Inventor： Bruno Jentzsch , Hubert Halbritter , Alexander Behres , Alvaro Gomez-lglesias , Christian Lauer , Simon Baumann
CPC classification number: H01S5/343 , H01S5/2031 , H01S5/3013 , H01S5/3095
Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.
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公开(公告)号：US20240235164A9
公开(公告)日：2024-07-11
申请号：US18546593
申请日：2022-01-27
Applicant: ams-OSRAM International GMBH
Inventor： Bruno Jentzsch , Hubert Halbritter , Alexander Behres , Alvaro Gomez-lglesias , Christian Lauer , Simon Baumann
CPC classification number: H01S5/343 , H01S5/2031 , H01S5/3013 , H01S5/3095
Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.
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