公开(公告)号：US20240235164A9

公开(公告)日：2024-07-11

申请号：US18546593

申请日：2022-01-27

Applicant: ams-OSRAM International GMBH

Inventor： Bruno Jentzsch ,  Hubert Halbritter ,  Alexander Behres ,  Alvaro Gomez-lglesias ,  Christian Lauer ,  Simon Baumann

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/343 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/3095

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

公开(公告)号：US20230369827A1

公开(公告)日：2023-11-16

申请号：US18245071

申请日：2021-09-03

Applicant: ams-OSRAM International GmbH

Inventor： Alexander Behres ,  Christian Lauer ,  Martin Hetzl

IPC: H01S5/22

CPC classification number: H01S5/2215

Abstract: An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.

公开(公告)号：US20240136800A1

公开(公告)日：2024-04-25

申请号：US18546593

申请日：2022-01-27

Applicant: ams-OSRAM International GMBH

Inventor： Bruno Jentzsch ,  Hubert Halbritter ,  Alexander Behres ,  Alvaro Gomez-lglesias ,  Christian Lauer ,  Simon Baumann

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/343 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/3095

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.