公开(公告)号：US20230178695A1

公开(公告)日：2023-06-08

申请号：US17923772

申请日：2021-05-05

Applicant: ams-OSRAM International GmbH

Inventor： Peter STAUSS ,  Hubert HALBRITTER

IPC: H01L33/58 ,  H01L33/42

CPC classification number: H01L33/58 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: The invention relates to a radiation-emitting semiconductor component comprising a semiconductor body which has an active zone for generating radiation and a radiation exit surface, a contact element which is arranged on the radiation exit surface at a first lateral distance from a first edge piece of the radiation exit surface and at a second lateral distance from a second edge piece of the radiation exit surface, and a decoupling structure for improving the decoupling of the radiation generated by the active zone, which decoupling structure is arranged on the radiation exit surface and has structural elements, wherein the structural elements vary in such a way that the radiation decoupling increases from the contact element to the first and/or second edge piece. Furthermore, a method is specified for producing a such a radiation-emitting semiconductor element.