公开(公告)号：US10132630B2

公开(公告)日：2018-11-20

申请号：US14162718

申请日：2014-01-23

申请人： mCube Inc.

发明人： Terrence Lee ,  Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka

IPC分类号： G01C19/5783 ,  G01C19/56 ,  G01P1/00 ,  B81B7/00 ,  G01P15/18 ,  G01P15/02 ,  G01P15/08

摘要： A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

公开(公告)号：US10036635B2

公开(公告)日：2018-07-31

申请号：US14163789

申请日：2014-01-24

申请人： mCube Inc.

发明人： Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC分类号： B81B3/00 ,  G01C19/574

CPC分类号： G01C19/574

摘要： A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

公开(公告)号：US20140311247A1

公开(公告)日：2014-10-23

申请号：US14163789

申请日：2014-01-24

申请人： mCube Inc.

发明人： WENHUA ZHANG ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC分类号： B81B3/00

CPC分类号： G01C19/574

摘要： A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

摘要翻译： MEMS速率传感器装置。 在一个实施例中，传感器装置包括配置在CMOS衬底上的MEMS速率传感器。 MEMS速率传感器可以包括具有四个驱动器元件的驱动器组和具有六个感测元件的传感器组，用于三轴旋转感测。 该传感器结构允许驱动质量中的低阻尼和感测质量中的高阻尼，这对于MEMS速率传感器设计是理想的。 低驱动器阻尼有利于MEMS速率功耗和性能，具有低驱动电位以实现高振荡幅度。