公开(公告)号：US09725304B2

公开(公告)日：2017-08-08

申请号：US14887631

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H01L21/56 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

公开(公告)号：US09075079B2

公开(公告)日：2015-07-07

申请号：US14297337

申请日：2014-06-05

Applicant: mCube Inc.

Inventor： Shingo Yoneoka ,  Sudheer Sridharamurthy ,  Wenhua Zhang ,  Te-Hsi Terrence Lee

IPC: G01P15/13 ,  G01C19/5762 ,  G01C19/5719 ,  G01P15/125 ,  G01P15/08 ,  G01C19/5712

CPC classification number: G01P15/131 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5762 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084 ,  G01P2015/0865

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract translation: 集成的MEMS惯性传感器装置。 该器件包括覆盖CMOS衬底的MEMS惯性传感器。 MEMS惯性传感器包括经由至少一个驱动弹簧耦合到表面区域的驱动框架，经由至少一个感测弹簧耦合到驱动框架的感测质量块和设置在感测质量块下方的感测电极。 该装置还包括设置在感测电极附近的至少一对正交消除电极，其中每对包括N电极和P电极。

公开(公告)号：US10322926B1

公开(公告)日：2019-06-18

申请号：US14887737

申请日：2015-10-20

Applicant: mCube, Inc.

Inventor： Sudheer Sridharamurthy ,  Te-Hsi Terrence Lee ,  Wenhua Zhang

IPC: G01C19/56 ,  B81B3/00 ,  B81C1/00

Abstract: A structure for a MEMS device includes a MEMS layer comprising a mass portion and a spring portion, a substrate coupled to the MEMS layer, wherein the substrate comprises a planar region and an stopper region, wherein the MEMS device and the substrate are oriented in a plurality of relative orientations in response to an external force, wherein the spring portion and the stopper region are configured to disengagingly impact when the external force exceeds a first threshold force, wherein the mass portion and the planar region are configured to disengagingly impact when the external force exceeds a second threshold force, and wherein the second threshold force exceeds the first threshold force.

公开(公告)号：US10267636B1

公开(公告)日：2019-04-23

申请号：US14987685

申请日：2016-01-04

Applicant: mCube, Inc.

Inventor： Sudheer S. Sridharamurthy ,  Tony Maraldo ,  Zheng-Yao Sun ,  Wenhua Zhang ,  Te-Hsi Terrence Lee ,  Sanjay Bhandari ,  Joseph Rastegar

IPC: G01C19/5684 ,  B81C99/00

Abstract: A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.

公开(公告)号：US10183860B2

公开(公告)日：2019-01-22

申请号：US14887622

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H01L21/56 ,  H01L41/113

Abstract: A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

公开(公告)号：US10132630B2

公开(公告)日：2018-11-20

申请号：US14162718

申请日：2014-01-23

Applicant: mCube Inc.

Inventor： Terrence Lee ,  Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka

IPC: G01C19/5783 ,  G01C19/56 ,  G01P1/00 ,  B81B7/00 ,  G01P15/18 ,  G01P15/02 ,  G01P15/08

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

公开(公告)号：US10036635B2

公开(公告)日：2018-07-31

申请号：US14163789

申请日：2014-01-24

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC: B81B3/00 ,  G01C19/574

CPC classification number: G01C19/574

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

公开(公告)号：US20140370638A1

公开(公告)日：2014-12-18

申请号：US14302385

申请日：2014-06-11

Applicant: mCube Inc.

Inventor： TE-HSI "TERRENCE" LEE ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

IPC: B81C1/00

CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

Abstract translation: 一种用于制造集成MEMS-CMOS器件的方法。 该方法可以包括提供具有表面区域的衬底构件，并形成具有覆盖在表面区域上的至少一个CMOS器件的CMOS IC层。 可以形成覆盖CMOS IC层的底部隔离层，并且可以形成覆盖在底部隔离层的一部分上的屏蔽层和顶部隔离层。 底部隔离层可以包括顶部隔离层和屏蔽层之间的隔离区域。 覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层，并且可被蚀刻以形成具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。

公开(公告)号：US10046964B2

公开(公告)日：2018-08-14

申请号：US14302385

申请日：2014-06-11

Applicant: mCube Inc.

Inventor： Te-Hsi “Terrence” Lee ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00

Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

公开(公告)号：US09950921B2

公开(公告)日：2018-04-24

申请号：US14930642

申请日：2015-11-02

Applicant: mCube Inc.

Inventor： Te-Hsi “Terrence” Lee ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.