Method, Program Product and Apparatus for Predicting Line Width Roughness and Resist Pattern Failure and the Use Thereof in a Lithography Simulation Process
    1.
    发明申请
    Method, Program Product and Apparatus for Predicting Line Width Roughness and Resist Pattern Failure and the Use Thereof in a Lithography Simulation Process 审中-公开
    方法,程序产品和装置,用于预测线宽粗糙度和抗蚀图案失效及其在平版印刷模拟过程中的应用

    公开(公告)号:US20120109607A1

    公开(公告)日:2012-05-03

    申请号:US13244191

    申请日:2011-09-23

    申请人: Steve Hansen

    发明人: Steve Hansen

    IPC分类号: G06G7/48

    摘要: A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; defining a first model representing the imaging performance of the optical imaging system and the process, and calibrating the model, where the first model generates values corresponding to a latent image slope. The method further includes the step of defining a second model for estimating a line width roughness of a feature to be imaged, where the second model utilizes the latent image slope values to estimate the line width roughness.

    摘要翻译: 一种生成用于模拟光学成像系统的成像性能的模型的方法。 该方法包括以下步骤:定义光学成像系统和由光学成像系统利用的过程; 定义表示光学成像系统和过程的成像性能的第一模型,以及校准模型,其中第一模型产生对应于潜像斜率的值。 该方法还包括定义用于估计要成像的特征的线宽粗糙度的第二模型的步骤,其中第二模型利用潜像斜率值来估计线宽粗糙度。

    Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL)
    2.
    发明申请
    Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL) 有权
    用于执行暗场双偶极平版印刷术(DDL)的方法和装置

    公开(公告)号:US20110014552A1

    公开(公告)日:2011-01-20

    申请号:US12890494

    申请日:2010-09-24

    IPC分类号: G03F1/00

    摘要: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。