Photonic Radiation Detection Device, And Methods For Dimensioning And Operating Such Device
    1.
    发明申请
    Photonic Radiation Detection Device, And Methods For Dimensioning And Operating Such Device 审中-公开
    光子辐射检测装置及其尺寸和操作方法

    公开(公告)号:US20140319364A1

    公开(公告)日:2014-10-30

    申请号:US14262194

    申请日:2014-04-25

    IPC分类号: G01T1/24

    CPC分类号: G01T1/24 G01T1/1647

    摘要: A photonic radiation detection device includes a collimator, a detector, and localization means for determining information relative to the localization of a photon interaction with the detector material. In at least one previously selected acquisition configuration, a degree of pixelation in the detection plane is greater than 1 and a collimator-detector distance (C) is greater than one tenth of the septal height (h) of the collimator where the septal height is a maximum dimension of the collimator in a direction orthogonal to the frontal detection plane. In one instance, the septal wall thickness (e) is one of about 0.1 or less than about 0.1 of the channel width (w). In another instance, the collimator-detector distance is greater than h/(2(w/e−1)). A dimensioning method includes, for at least one given spatial frequency, calculating and comparing merit indicator values for different acquisition configurations of a structural model of the detection device.

    摘要翻译: 光子辐射检测装置包括准直器,检测器和用于确定相对于与检测器材料的光子相互作用的定位的信息的定位装置。 在至少一个先前选择的采集配置中,检测平面中的像素度大于1,并且准直器 - 检测器距离(C)大于准直器的间隔高度(h)的十分之一,其中间隔高度为 准直仪在与正面检测平面正交的方向上的最大尺寸。 在一种情况下,隔壁厚度(e)是通道宽度(w)的约0.1或小于约0.1之一。 在另一个实例中,准直器 - 检测器距离大于h /(2(w / e-1)))。 对于至少一个给定的空间频率,尺寸标注方法包括计算和比较检测装置的结构模型的不同采集配置的优点指标值。

    CONTACTLESS DEVICE FOR GENERATING COMPRESSION OR TENSION STEPS

    公开(公告)号:US20240361198A1

    公开(公告)日:2024-10-31

    申请号:US18646254

    申请日:2024-04-25

    IPC分类号: G01L25/00

    CPC分类号: G01L25/00

    摘要: A device including a sensor capable of carrying out dynamic force or mass measurements, for example a force sensor, including a magnetic device to generate a magnetic field according to at least one axis (XX′), a device to adjust and then hold a relative position, according to the axis (XX′), between a force sensor to be tested and the magnetic device, and a device to measure a signal representative of a tensile or compressive force applied to a contactless force sensor, directly using the magnetic device.

    Radar detection device
    3.
    发明授权

    公开(公告)号:US12123934B2

    公开(公告)日:2024-10-22

    申请号:US17456452

    申请日:2021-11-24

    IPC分类号: G01S13/02 G01S13/34

    CPC分类号: G01S13/0209 G01S13/343

    摘要: A radar measuring device including at least:



    a circuit for generating a radar signal RFIN(t);
    an emitting antenna;
    an injection-locked oscillator;
    a first power divider comprising an input coupled to an output of the circuit for generating the radar signal RFIN(t), a first output coupled to the emitting antenna, and a second output to an input of the injection-locked oscillator which is configured to be locked over a portion of an effective band B of the radar signal RFIN(t);
    a receiving antenna intended to receive a reflected radar signal RFIN_REFL(t);
    a mixer comprising a first input coupled to the receiving antenna, a second input coupled to an output of the injection-locked oscillator, and an output coupled to an input to a signal processing circuit.

    Method for sizing a gray scale lithography mask

    公开(公告)号:US12111569B2

    公开(公告)日:2024-10-08

    申请号:US18601853

    申请日:2024-03-11

    发明人: Ujwol Palanchoke

    IPC分类号: G03F1/70

    CPC分类号: G03F1/70

    摘要: A method for sizing a greyscale lithography mask is disclosed. The mask includes first opaque zones, being opaque to light-exposing radiation, located in first pixels forming a first mask grating. A first target density of a first surface density of first opaque zones is first established. This first target density makes it possible to expose a resin to light over a first given target thickness when it is exposed to the radiation through the first grating. The dimensions of the first pixels and the dimensions of the first opaque zones are then established, such that the value of an error over the first target thickness is less than a first given threshold. The dimensions obtained for the sizing of the first mask grating are used.

    METHOD FOR MANAGING A CACHE MEMORY
    7.
    发明公开

    公开(公告)号:US20240320151A1

    公开(公告)日:2024-09-26

    申请号:US18581454

    申请日:2024-02-20

    发明人: Olivier SAVRY

    IPC分类号: G06F12/0811 G06F21/60

    CPC分类号: G06F12/0811 G06F21/602

    摘要: This method comprises:



    selecting, depending on an address of a word to be read or written, a first cell in an indirection table and using, as first value generated for a line index, the value contained in this first cell, and
    in response to triggering of a cache miss:

    storing the word retrieved from a memory of higher rank in a new line identified by a second line-index value, this second value being contained in a second cell of the indirection table, and
    permutating, in the indirection table, only values contained in the first and second cells, so that after this permutation the first cell contains the second value and the second cell contains the first value.

    PROCESS FOR PRODUCING LIGHT-EMITTING DIODES
    8.
    发明公开

    公开(公告)号:US20240313150A1

    公开(公告)日:2024-09-19

    申请号:US18575478

    申请日:2022-06-27

    IPC分类号: H01L33/00

    CPC分类号: H01L33/0075

    摘要: A process for producing light-emitting diodes includes producing a first segment made of inorganic semiconductor doped with a first conductivity type; producing, on a first region of the first segment and through a mask, a first emitting segment made of inorganic semiconductor; moving the mask; producing, on a second region of the first segment, a second emitting segment made of inorganic semiconductor; and producing, at least on the first and second emitting segments, a segment made of inorganic semiconductor doped with a second conductivity type. The chemical compositions of the first and second emitting segments are different from each other and such that their bandgaps are narrower than or equal to those of the segments made of doped inorganic semiconductor.

    METHOD FOR SIZING A GRAY SCALE LITHOGRAPHY MASK

    公开(公告)号:US20240302737A1

    公开(公告)日:2024-09-12

    申请号:US18601853

    申请日:2024-03-11

    发明人: Ujwol PALANCHOKE

    IPC分类号: G03F9/00 G03F7/00

    CPC分类号: G03F1/70

    摘要: A method for sizing a greyscale lithography mask is disclosed. The mask includes first opaque zones, being opaque to light-exposing radiation, located in first pixels forming a first mask grating. A first target density of a first surface density of first opaque zones is first established. This first target density makes it possible to expose a resin to light over a first given target thickness when it is exposed to the radiation through the first grating. The dimensions of the first pixels and the dimensions of the first opaque zones are then established, such that the value of an error over the first target thickness is less than a first given threshold. The dimensions obtained for the sizing of the first mask grating are used.