公开(公告)号：US20240313150A1

公开(公告)日：2024-09-19

申请号：US18575478

申请日：2022-06-27

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Bruno DAUDIN ,  Bruno GAYRAL

IPC分类号： H01L33/00

CPC分类号： H01L33/0075

摘要： A process for producing light-emitting diodes includes producing a first segment made of inorganic semiconductor doped with a first conductivity type; producing, on a first region of the first segment and through a mask, a first emitting segment made of inorganic semiconductor; moving the mask; producing, on a second region of the first segment, a second emitting segment made of inorganic semiconductor; and producing, at least on the first and second emitting segments, a segment made of inorganic semiconductor doped with a second conductivity type. The chemical compositions of the first and second emitting segments are different from each other and such that their bandgaps are narrower than or equal to those of the segments made of doped inorganic semiconductor.

公开(公告)号：US20180351037A1

公开(公告)日：2018-12-06

申请号：US15779388

申请日：2016-11-28

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

发明人： Xin ZHANG ,  Bruno-Jules DAUDIN ,  Bruno GAYRAL ,  Philippe GILET

IPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/08 ,  H01L21/02387 ,  H01L21/02458 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/18 ,  H01L33/32

摘要： The invention relates to an optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3) on which same lies, and comprising: a first doped portion (10), extending from one surface of the substrate (3) along the longitudinal axis (Δ); an active portion (30) comprising a passivation layer (34) and at least one quantum well (32) covered laterally by said passivation layer (34), the quantum well (32) of the active portion (30) having a mean diameter greater than that of said first doped portion (10), said active portion (30) extending from the first doped portion (10) along the longitudinal axis (Δ); and a second doped portion (20), extending from the active portion (30) along the longitudinal axis (Δ). The invention is characterized in that the device comprises a plurality of three-dimensional semiconductor structures (2) extending substantially in parallel with one another, the active portions (30) of which are in mutual contact.