公开(公告)号：US07038243B1

公开(公告)日：2006-05-02

申请号：US08578980

申请日：1995-12-27

申请人： Takanobu Kamakura

发明人： Takanobu Kamakura

IPC分类号： H01L29/22

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/30

摘要： A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge carriers in the active layer. The hetero-configuration is interposed between a first and a second electrode. The semiconductor light emitting device further includes a dense defect-injected layer. This layer is provided between the first electrode and the hetero-configuration. The dense defect layer is made of a material having a concentration of crystal defects, a value of a lattice constant and a thickness which together help prevent at least some remotely generated crystal defects from reaching the layers of the hetero-configuration.

摘要翻译： 半导体发光器件包括具有有源层，第一覆盖层和第二覆盖层的异质结构，所述有源层插入在所述覆盖层之间。 当注入电荷载体时，有源层发光。 第一和第二包层将注入的电荷载体保持在有源层中。 异质结构介于第一和第二电极之间。 半导体发光器件还包括致密缺陷注入层。 该层设置在第一电极和异质构造之间。 致密缺陷层由具有晶体缺陷的浓度，晶格常数值和厚度的材料制成，这些材料一起有助于防止至少一些远程产生的晶体缺陷到达异构结构的层。