公开(公告)号：US20070169357A1

公开(公告)日：2007-07-26

申请号：US11339040

申请日：2006-01-25

申请人： Saeed Yazdani

发明人： Saeed Yazdani

IPC分类号： G01B7/30 ,  H01F21/06

CPC分类号： G01D11/245 ,  G01D5/20 ,  G01D5/2291

摘要： An angular displacement sensor. The input shaft is supported by a housing and fixed to a main gear. A plurality of secondary gears are arranged around and meshed with the primary gear. A plurality of displacement sensors are integrally coupled with the secondary gears. Advantageously, the main shaft is formed with a shear notch. Further, each of the secondary gears are coupled to the displacement sensors so as to break free in case of a jam.

摘要翻译： 角位移传感器。 输入轴由壳体支撑并固定在主齿轮上。 多个次级齿轮布置在主齿轮周围并与主齿轮啮合。 多个位移传感器与次级齿轮一体地联接。 有利地，主轴形成有剪切切口。 此外，每个副齿轮联接到位移传感器，以便在卡纸的情况下断开。

公开(公告)号：US5604685A

公开(公告)日：1997-02-18

申请号：US342218

申请日：1994-11-18

申请人： Petrus H. Seesink ,  Georg Schneider ,  Richard Wagner ,  Vierten M. Mellert

发明人： Petrus H. Seesink ,  Georg Schneider ,  Richard Wagner ,  Vierten M. Mellert

IPC分类号： G01L19/04 ,  G01D3/00 ,  G01D3/02 ,  G01D3/028 ,  G01D3/036 ,  G01D5/24

CPC分类号： G01D3/0365

摘要： A circuit arrangement for the linearization and temperature compensation of capacitive sensor signals is provided which requires few components and wherein the compensated input signal is obtained fast. The arrangement includes: a clock generator; a reference capacitor; a measuring capacitor; a temperature-dependent voltage divider connected between an operating and a reference potential which measures the temperature of the measuring capacitor; an adjusting circuit which acts on the measuring capacitor and the reference capacitor and having a first input connected to the operating potential, a second input connected to the voltage divider, and a third input; an integrating stage connected to the measuring capacitor and the reference capacitor and having its output coupled to the third input of the adjusting circuit, the output being the output of the arrangement. The output signal is ##EQU1## where C.sub.v =(C.sub.m -C.sub.r)/C.sub.m, (C.sub.m -C.sub.r)/(C.sub.m +C.sub.r) , or (C.sub.m -C.sub.r)/C.sub.r ; C.sub.m is the capacitance of the capacitor; C.sub.r is the capacitance of the reference capacitor; U is the operating potential; a.sub.0 is a zero adjustment value; a.sub.1 is a temperature coefficient zero adjustment value; a.sub.2 is a first span adjustment value; a.sub.3 is a temperature coefficient span adjustment value; b.sub.0 is a second span adjustment value; b.sub.1 is a linearization adjustment value, and v.sub.1 is the temperature-dependent resistance ratio of the voltage divider.

摘要翻译： 提供了用于电容传感器信号的线性化和温度补偿的电路装置，其需要很少的部件，并且其中快速获得补偿的输入信号。 该装置包括：时钟发生器; 参考电容; 测量电容器; 连接在测量电容器温度的工作电压和参考电位之间的温度依赖性分压器; 调节电路，其作用在测量电容器和参考电容器上，并具有连接到工作电位的第一输入端，连接到分压器的第二输入端和第三输入端; 连接到测量电容器和参考电容器并且其输出耦合到调节电路的第三输入端的积分级，输出是该装置的输出。 Cv =（Cm-Cr）/ Cm，（Cm-Cr）/（Cm + Cr）或（Cm-Cr）/ Cr的输出信号为 Cm是电容器的电容; Cr是参考电容器的电容; U是经营潜力; a0是零调整值; a1是温度系数零调整值; a2是第一个量程调整值; a3是温度系数范围调整值; b0是第二范围调整值; b1是线性化调整值，v1是分压器的温度依赖电阻比。

公开(公告)号：US5576251A

公开(公告)日：1996-11-19

申请号：US395397

申请日：1995-02-22

申请人： Raffi M. Garabedian ,  M. Salleh Ismail ,  Gary J. Pashby ,  Jeffrey K. K. Wong

发明人： Raffi M. Garabedian ,  M. Salleh Ismail ,  Gary J. Pashby ,  Jeffrey K. K. Wong

IPC分类号： B81B3/00 ,  B81C1/00 ,  G01B7/14 ,  G01L9/00 ,  G01P15/12 ,  H01L29/84 ,  H01L21/465

CPC分类号： H01L29/84 ,  B81C1/00238 ,  G01B7/14 ,  G01L9/0073 ,  G01L9/0098 ,  G01P15/124 ,  B81B2203/0127 ,  B81C2203/036 ,  B81C2203/038 ,  G01P2015/0828

摘要： Fabrication of semiconductor devices with movable structures includes local oxidation of a wafer and oxide removal to form a depression in an elevated bonding surface. A second wafer is fusion bonded to the elevated bonding surface and shaped to form a flexible membrane. An alternative fabrication technique forms a spacer having a depression on a first wafer and active regions on a second wafer, and fusion bonds the wafers together with the depression over the active regions. Devices formed are integrable with standard MOS devices and include FETs, capacitors, and sensors with movable membranes. An FET sensor has gate and drain coupled together and a drain-source voltage which depends on the gate's deflection. Selected operating current, channel length, and channel width provide a drain-source voltage linearly related to gate deflection. Alternatively, two transistors subjected to the same gate deflection provide a differential voltage related to the square root of the deflection if channel currents or channel widths differ. Transistors subjected to the different gate deflections provide a differential signal that cancels effects that are independent of deflection. A capacitive sensor includes a doped region underlying the center of a flexible membrane. The doped region is isolated from a surrounding region which is biased at the voltage of the membrane.

摘要翻译： 具有可移动结构的半导体器件的制造包括晶片的局部氧化和氧化物去除以在升高的结合表面中形成凹陷。 第二个晶片被熔合到提升的粘合表面上并成形为形成柔性膜。 替代的制造技术形成了在第一晶片上具有凹陷并且在第二晶片上具有有源区域的间隔物，并且在活性区域上将晶片与凹陷熔合在一起。 形成的器件可与标准MOS器件集成，包括FET，电容器和带有可移动膜的传感器。 FET传感器具有耦合在一起的栅极和漏极以及取决于栅极偏转的漏极 - 源极电压。 所选的工作电流，沟道长度和通道宽度提供与栅极偏转线性相关的漏极 - 源极电压。 或者，如果沟道电流或沟道宽度不同，则经受相同栅极偏转的两个晶体管提供与偏转的平方根相关的差分电压。 经受不同门极偏转的晶体管提供了抵消与偏转无关的影响的差分信号。 电容传感器包括在柔性膜的中心下方的掺杂区域。 掺杂区域与偏置在膜电压的周围区域隔离。