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    TRANSITION METAL DEPOSITION PROCESSES AND A DEPOSITION ASSEMBLY
    2.
    发明公开
    TRANSITION METAL DEPOSITION PROCESSES AND A DEPOSITION ASSEMBLY 审中-公开

    公开(公告)号：US20240096632A1

    公开(公告)日：2024-03-21

    申请号：US18367491

    申请日：2023-09-13

    申请人： ASM IP Holding B.V.

    发明人： Elina Färm ,  Charles Dezelah ,  Jan Willem Maes

    IPC分类号： H01L21/285 ,  C23C16/16 ,  C23C16/455

    CPC分类号： H01L21/28568 ,  C23C16/16 ,  C23C16/45527 ,  C23C16/45557

    摘要： The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.

    Film forming method, film forming apparatus and recording medium
    7.
    发明授权
    Film forming method, film forming apparatus and recording medium 有权
    成膜方法，成膜装置和记录介质

    公开(公告)号：US09540733B2

    公开(公告)日：2017-01-10

    申请号：US14697824

    申请日：2015-04-28

    申请人： TOKYO ELECTRON LIMITED

    发明人： Tadahiro Ishizaka

    IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  C23C16/06 ,  C23C16/46 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  H01L23/532 ,  C23C16/16

    CPC分类号： C23C16/46 ,  C23C16/06 ,  C23C16/16 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/52 ,  H01L21/02107 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A film forming method in which in a state in which a target substrate is loaded on a loading table body of a loading table installed in a processing container and an interior of the processing container is evacuated, a film forming material gas is supplied into the processing container while heating the target substrate with a heater installed in the loading table body, to be thermally decomposed or reacted on a surface of the target substrate to form a predetermined film on the target substrate, includes introducing a heat transfer gas containing an H2 gas or an He gas into the processing container to transfer heat of the loading table body to a radially outer side of the loading table body, before the film forming material gas is supplied.

    摘要翻译： 一种成膜方法，其中在将目标基底装载在安装在处理容器中的装载台的装载台体和处理容器的内部的状态下，将成膜材料气体供给到处理 容器，同时用安装在装载台主体中的加热器加热目标基板，在目标基板的表面上热分解或反应以在目标基板上形成预定的膜，包括引入含有H 2气体的传热气体或 在供给成膜材料气体之前，将He气体输送到加工容器中，以将装载台体的热量传递到装载台体的径向外侧。

    Machine and Process for building 3-Dimensional Metal and Composite Structures by Using Carbonyl and Other Gases
    8.
    发明申请
    Machine and Process for building 3-Dimensional Metal and Composite Structures by Using Carbonyl and Other Gases 审中-公开
    使用羰基和其他气体建立三维金属和复合结构的机器和工艺

    公开(公告)号：US20160258053A1

    公开(公告)日：2016-09-08

    申请号：US14636326

    申请日：2015-03-03

    申请人： Joseph Robert Pickens

    发明人： Joseph Robert Pickens

    IPC分类号： C23C16/16 ,  C23C16/455 ,  C23C16/50 ,  C23C16/46

    CPC分类号： C23C16/16 ,  C23C16/01 ,  C23C16/04 ,  C23C16/045 ,  C23C16/30 ,  C23C16/4557 ,  F41A21/02

    摘要： The current invention teaches a process to add transition metals to a substrate with careful, spacial control to build up regions selectively, and a machine to enable this process to be performed. The process is amenable to doping with other gases to provide dispersion strengthening and/or to form metal matrix composites. In addition, the process is capable of forming laminar or topologically layered materials. In the present invention, a heated nozzle with a variable orifice projects carbonyl gas or gases at the appropriate temperature to precise locations on a surface. The coordinates on the substrate over which the nozzle is located can be computer controlled. Furthermore, the orifice of the nozzle and the flow rate are controlled to widen or narrow the area of deposition. The substrate can be heated to a temperature where transition metal carbonyl deposition is optimal or near optimal, or heated below the optimal region such that the heated carbonyl gas from the nozzle leads to rapid deposition in the desired localized region. The structure can be built up into complex shapes as desired.

    摘要翻译： 本发明教导了一种通过谨慎的空间控制将过渡金属添加到基底中以有选择地建立区域的方法，以及使得能够执行该过程的机器。 该方法适于掺杂其它气体以提供分散强化和/或形成金属基质复合材料。 此外，该方法能够形成层状或拓扑分层的材料。 在本发明中，具有可变孔口的加热喷嘴在合适的温度下将羰基气体或气体投射到表面上的精确位置。 喷嘴所在的基板上的坐标可以由计算机控制。 此外，控制喷嘴的孔口和流速以扩大或缩小沉积面积。 衬底可以被加热到过渡金属羰基沉积是最佳或接近最佳状态或加热到最佳区域以下的温度，使得来自喷嘴的加热的羰基气体导致在期望的局部区域中的快速沉积。 该结构可根据需要构建成复杂的形状。

    RUTHENIUM FILM FORMING METHOD, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    9.
    发明申请
    RUTHENIUM FILM FORMING METHOD, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    薄膜成膜方法，薄膜成型装置和半导体器件制造方法

    公开(公告)号：US20160240433A1

    公开(公告)日：2016-08-18

    申请号：US15043675

    申请日：2016-02-15

    申请人： Tokyo Electron Limited

    发明人： Tadahiro Ishizaka

    IPC分类号： H01L21/768 ,  C23C16/455 ,  H01L21/285

    CPC分类号： H01L21/28556 ,  C23C16/16 ,  C23C16/4481 ,  C23C16/45523 ,  C23C16/45561 ,  H01L21/76843 ,  H01L23/53238

    摘要： A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vessel 1 by supplying the CO gas as a carrier gas from a CO gas container 43 configured to contain the CO gas into a film forming source container 41 configured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vessel 1 from the CO gas container 43 after stopping the introducing of the mixed gas into the processing vessel 1. The deposition process and the CO gas introduction process are repeated multiple times.

    摘要翻译： 钌膜形成方法包括通过从构成为含有CO气体的CO气体容器43供给作为载气的CO气体而将羰基羰基钌和CO气体的混合气体导入处理容器1的沉积工序 成膜源容器41，其被配置为含有固态的羰基钌作为成膜源材料，并通过在晶片W上分解羰基钌来形成钌膜; 以及通过在停止将混合气体引入到处理容器1中之后，将CO气体从CO气体容器43直接引入处理容器1中而使CO气体与晶片W的表面接触的CO气体导入工序 沉积过程和CO气体引入过程重复多次。

    Method to improve selectivity cobalt cap process
    10.
    发明授权
    Method to improve selectivity cobalt cap process 有权
    提高选择性钴帽工艺的方法

    公开(公告)号：US09275898B1

    公开(公告)日：2016-03-01

    申请号：US14637442

    申请日：2015-03-04

    申请人： GLOBALFOUNDRIES Inc.

    发明人： Jiehui Shu ,  Zhiguo Sun ,  Yang Bum Lee ,  Huang Liu

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

    CPC分类号： H01L23/53228 ,  C23C16/04 ,  C23C16/16 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of forming a Co cap on a Cu interconnect in or through an ULK ILD with improved selectivity while protecting an ULK ILD surface are provided. Embodiments include providing a Cu filled via in an ULK ILD; depositing a Co precursor and H2 over the Cu-filled via and the ULK ILD, the Co precursor and H2 forming a Co cap over the Cu-filled via; depositing an UV cured methyl over the Co cap and the ULK ILD; performing an NH3 plasma treatment after depositing the UV cured methyl; and repeating the steps of depositing a Co precursor through performing an NH3 plasma treatment to remove impurities from the Co cap.

    摘要翻译： 提供了在保护ULK ILD表面的情况下，通过ULK ILD或通过ULK ILD在Cu互连上形成Co帽的方法，其具有改进的选择性。 实施例包括在ULK ILD中提供Cu填充的通孔; 在Cu填充的通孔和ULK ILD上沉积Co前体和H 2，Co前体和H 2在Cu填充的通孔上形成Co盖; 在Co盖和ULK ILD上沉积UV固化的甲基; 沉积UV固化甲基后进行NH3等离子体处理; 并且重复以下步骤：通过进行NH 3等离子体处理来沉积Co前体以从Co盖去除杂质。