公开(公告)号：US11974508B2

公开(公告)日：2024-04-30

申请号：US17547810

申请日：2021-12-10

申请人： Ambature, Inc.

发明人： Michael S. Lebby ,  Davis H. Hartmann

IPC分类号： H10N60/01 ,  H10N60/12 ,  H10N60/80

CPC分类号： H10N60/0941 ,  H10N60/0381 ,  H10N60/0632 ,  H10N60/124 ,  H10N60/805

摘要： According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.