公开(公告)号：US5703382A

公开(公告)日：1997-12-30

申请号：US559862

申请日：1995-11-20

申请人： Michael G. Hack ,  I-Wei Wu

发明人： Michael G. Hack ,  I-Wei Wu

IPC分类号： G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  A01L29/04 ,  G02F1/1343

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/78645 ,  G02F1/1368

摘要： Cell circuitry in an array on a substrate includes a TFT or other structure with a series of two or more channels and with an intrachannel region between each pair of adjacent channels in the series. Each intrachannel region has a continuously distribution of dopant particles and the distribution of dopant particles in the intrachannel regions together controls reverse gate bias leakage current without significantly reducing ON current. The average dopant density in intrachannel regions can be sufficiently low to ensure that reverse gate bias leakage current is approximately constant across a range of reverse gate bias voltages. For applications such as light valve arrays, sensor arrays, and memory arrays in which each cell includes a capacitive element for storing a level of charge in one of two or more voltage bands, the average dopant density of intrachannel regions can ensure that reverse gate bias leakage current is sufficiently low that a level of charge stored by the capacitive element remains within its voltage band during a storage period.

摘要翻译： 衬底中的阵列中的单元电路包括具有一系列两个或更多个通道的TFT或其它结构，并且在串联中的每对相邻通道之间具有通道内区域。 每个通道内区域具有掺杂剂颗粒的连续分布，并且通道区域中的掺杂剂颗粒的分布一起控制反向栅极偏置泄漏电流，而不显着降低导通电流。 沟道内区域中的平均掺杂剂密度可以足够低以确保反向栅极偏置漏电流在反向栅极偏置电压的范围内近似恒定。 对于诸如光阀阵列，传感器阵列和存储器阵列的应用，其中每个单元包括用于在两个或更多个电压带之一中存储电荷水平的电容元件，通道间区域的平均掺杂剂密度可以确保反向栅极偏置 泄漏电流足够低，使得在存储周期期间由电容元件存储的电荷水平保持在其电压带内。