公开(公告)号：US6114740A

公开(公告)日：2000-09-05

申请号：US944101

申请日：1997-09-30

申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/02 ,  H01L31/10 ,  A01L31/06 ,  H01L31/00

CPC分类号： H01L27/144 ,  H01L31/02024

摘要： The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor layer of the first conductivity type for dividing the first semiconductor layer into semiconductor regions of the second conductivity type; light-detecting sections being constituted by the divided semiconductor regions and underlying regions of the semiconductor substrate, a divided photodiode being composed of the light-detecting sections; a second semiconductor layer of the second conductivity type formed only in the vicinity of the first semiconductor layer of the first conductivity type functioning as a division section of the divided photodiode and within the regions of the semiconductor substrate forming the respective light-detecting sections; and a second semiconductor layer of the first conductivity type formed in a surface region of the first semiconductor layer of the second conductivity type including the division section so as to cover an upper part of the second semiconductor layer of the second conductivity type.

摘要翻译： 本发明的电路集成光接收元件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的第二导电类型的第一半导体层; 第一导电类型的第一半导体层，用于将第一半导体层分成第二导电类型的半导体区域; 光检测部分由半导体衬底的划分的半导体区域和下面的区域构成，由光检测部分组成的分隔光电二极管; 第二导电类型的第二半导体层仅形成在用作分隔光电二极管的分割部分的第一导电类型的第一半导体层附近并且在形成各个光检测部分的半导体衬底的区域内; 以及第一导电类型的第二半导体层，形成在包括分隔部分的第二导电类型的第一半导体层的表面区域中，以覆盖第二导电类型的第二半导体层的上部。