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公开(公告)号:US5264245A
公开(公告)日:1993-11-23
申请号:US802257
申请日:1991-12-04
CPC分类号: C23C16/042 , C23C16/44
摘要: A chemical vapor deposition (CVD) method utilizing an apparatus comprising a reactor having a coating chamber at elevated temperature, means for supporting substrates to be coated at different zones in the coating chamber, and means for supplying a gaseous reactant stream to the chamber for distribution to the coating zones in a manner that the stream is heated to substantially different temperatures at different coating zones. Reactivity-altering material is disposed at the coating zones for contact by the reactant stream supplied thereto before the reactant stream contacts a substrate at the zones. The reactivity-altering material includes a composition that differs between coating zones in dependence on the reactant stream temperatures at the coating zones as necessary to alter the reactivity of the reactant (i.e., activity of a particular chemical specie of the reactant stream) stream at the coating zones in a manner to provide substantially the same reactant reactivity at all coating zones. CVD coatings are thereby produced on the substrates that exhibit improved uniformity in composition and thickness from one substrate to the next at the different zones.
摘要翻译: 使用包括在升高的温度下具有涂布室的反应器的装置的化学气相沉积(CVD)方法,用于支撑待涂布在涂覆室中的不同区域的基底的装置,以及用于将气态反应物流供应到室以供分配的装置 以使得流在不同涂层区域被加热到基本不同的温度的方式涂覆到涂层区域。 反应性改变材料设置在涂层区域处,以在反应物流与区域之间的基底接触之前由供应的反应物流接触。 反应性改变材料包括根据需要改变反应物的反应性(即,反应物流的特定化学物质的活性)流在涂层区域的反应物流温度在涂层区域之间不同的组合物 涂覆区域以在所有涂覆区域提供基本上相同的反应物反应性的方式。 因此,在基板上产生CVD涂层,其在不同区域表现出从一个基板到下一个基板的组成和厚度均匀性的改善。