公开(公告)号：US06821572B2

公开(公告)日：2004-11-23

申请号：US10377805

申请日：2003-03-04

申请人： Kwang-Jin Moon ,  Gil-Heyun Choi ,  Sang-Bum Kang ,  Hee-Sook Park

发明人： Kwang-Jin Moon ,  Gil-Heyun Choi ,  Sang-Bum Kang ,  Hee-Sook Park

IPC分类号： C23C1656

CPC分类号： C23C16/4405

摘要： After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and/or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.

摘要翻译： 在使用处理室将基底上的难熔金属膜沉积之后，用包括氮气和/或氢气在内的气体进行等离子体处理，并进行原位清洗。 通过用包括氮气的气体等离子体处理室，在衬底处理期间在室的内表面上形成的难熔金属膜被氮化。 氮化耐火金属膜可以在原位清洗过程中从室中除去。 通过用包括氢的气体对室进行等离子体处理，将在室中产生的反应副产物稀释除去。 室可以在包括氮气和氢气的气体环境中进行等离子体处理。 此外，等离子体处理可以在原位清洁之前和之后进行。