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公开(公告)号：US06565651B2
公开(公告)日：2003-05-20
申请号：US09759110
申请日：2001-01-11
IPC分类号： C30B1518
摘要： A method of manufacturing a damage-resistant silicon wafer is provided. The method comprises adding polycrystalline silicon to a crucible, adding a nitrogen-containing dopant to the crucible, heating the polycrystalline silicon to form a melt of nitrogen-doped silicon, pulling a nitrogen-doped silicon crystal from the melt using a seed crystal according to the Czochralski technique, forming a silicon wafer from the silicon crystal, the silicon wafer having an edge, and rounding the edge of the silicon wafer. The method may optionally include applying an electrical potential across the crucible while pulling the nitrogen-doped silicon crystal from the melt.
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公开(公告)号：US06402834B1
公开(公告)日：2002-06-11
申请号：US09485049
申请日：2000-01-31
IPC分类号： C30B1518
摘要： In a monocrystal producing device using a pulling-down method, a raw material melt 5m is continuously supplied into a crucible 2 to grow a crystal 18 by supplying a powdery raw material 5p onto a premelt plate 3 inside an electric furnace 10 with a powdery raw material supplying device 20 and melting the powdery raw material 5p on the premelt plate 3 to generate the raw material melt 5m, and causing this raw material melt 5m to drop out inside the crucible 2. A dry air is introduced into the powdery raw material 5p inside the powdery raw material tank 6 to prevent moisture of the raw material powder 5p. A transferring tube 9 for transferring the raw material 5m is cooled to prevent the filling in the transferring tube 9 based on melting of the powdery raw material 5p. This makes it possible to produce a monocrystal having a stable chemical composition, a large diameter, and a long size at a low price.
摘要翻译： 在使用下拉法的单晶体制造装置中，将原料熔体5m连续地供给到坩埚2中，通过将粉末状原料5p供给到具有粉末状原料的电炉10内的预熔融板3上， 材料供给装置20，将预制熔融板3上的粉末状原料5p熔融而生成原料熔融物5m，使该原料熔融物5m从坩埚2的内部脱落。将干燥空气导入粉末状原料5p 在粉状原料罐6内部，以防止原料粉末5p的水分。 用于转移原料5m的转移管9被冷却，以防止粉状原料5p熔化的填充在转移管9中。 这使得可以以低价格生产具有稳定的化学组成，大直径和长尺寸的单晶。
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