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公开(公告)号：US06565651B2
公开(公告)日：2003-05-20
申请号：US09759110
申请日：2001-01-11
IPC分类号： C30B1518
摘要： A method of manufacturing a damage-resistant silicon wafer is provided. The method comprises adding polycrystalline silicon to a crucible, adding a nitrogen-containing dopant to the crucible, heating the polycrystalline silicon to form a melt of nitrogen-doped silicon, pulling a nitrogen-doped silicon crystal from the melt using a seed crystal according to the Czochralski technique, forming a silicon wafer from the silicon crystal, the silicon wafer having an edge, and rounding the edge of the silicon wafer. The method may optionally include applying an electrical potential across the crucible while pulling the nitrogen-doped silicon crystal from the melt.
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公开(公告)号：US06395085B2
公开(公告)日：2002-05-28
申请号：US09759029
申请日：2001-01-11
IPC分类号： C30B1520
CPC分类号： C23C16/455 , C23C16/4584 , C23C16/481 , C30B25/12 , C30B31/14 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A method of manufacturing a high-purity epitaxial silicon wafer is provided. The method includes providing a quartz crucible for melting silicon; adding silicon to the crucible; heating the crucible to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt; forming a silicon wafer from the silicon crystal, the wafer having a frontside and a backside; and simultaneously depositing an epitaxial first silicon film on the frontside of the wafer and a polycrystalline second silicon film on the backside of the wafer.
摘要翻译： 提供一种制造高纯度外延硅晶片的方法。 该方法包括提供用于熔化硅的石英坩埚; 向坩埚中加入硅; 加热坩埚形成熔体; 在坩埚上施加电位; 从熔体中拉出硅晶体; 从硅晶体形成硅晶片，晶片具有前侧和后侧; 并且在晶片的前侧同时沉积外延第一硅膜和晶片背面上的多晶第二硅膜。
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3.发明授权公开(公告)号：US06454852B2
公开(公告)日：2002-09-24
申请号：US09759030
申请日：2001-01-11
IPC分类号： C30B1520
CPC分类号： C23C16/455 , C23C16/4584 , C23C16/481 , C30B25/12 , C30B31/14 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A low-cost method of manufacturing a silicon wafer is provided. The method comprises providing a crucible for melting silicon; adding silicon to the crucible; melting the silicon to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt according to the Czochralski technique at a pulling rate of greater than 1.1 mm/min; and forming a silicon wafer from the silicon crystal. The method may also include adding a nitrogen-containing dopant to the crucible. Furthermore, the method may include etching the wafer first in an alkaline etching solution, and then in an acidic etching solution. The method may also include simultaneously depositing an epitaxial first film on the frontside of the wafer and a second film on the backside of the wafer, wherein the second film traps impurities on the backside of the wafer so the impurities do not contaminate the frontside of the wafer while the epitaxial first film is being grown.
摘要翻译： 提供了一种制造硅晶片的低成本方法。 该方法包括提供用于熔化硅的坩埚; 向坩埚中加入硅; 熔化硅以形成熔体; 在坩埚上施加电位; 以Czochralski技术，以大于1.1mm / min的拉伸速率从熔体中拉出硅晶体; 以及从硅晶体形成硅晶片。 该方法还可以包括向坩埚中加入含氮掺杂剂。 此外，该方法可以包括首先在碱性蚀刻溶液中蚀刻晶片，然后在酸性蚀刻溶液中蚀刻晶片。 该方法还可以包括在晶片的前侧同时沉积外延第一膜和在晶片的背面上的第二膜，其中第二膜捕获晶片背面的杂质，使得杂质不会污染晶片的前侧 晶圆，同时外延第一薄膜正在生长。
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公开(公告)号：US06632277B2
公开(公告)日：2003-10-14
申请号：US09759028
申请日：2001-01-11
IPC分类号： C30B3118
CPC分类号： C23C16/455 , C23C16/4584 , C23C16/481 , C30B25/12 , C30B31/14 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A method of manufacturing a silicon wafer with robust gettering sites and a low concentration of surface defects is provided. The method comprises adding polycrystalline silicon to a crucible; adding a nitrogen-containing dopant to the crucible; heating the crucible to form a nitrogen-doped silicon melt; pulling a silicon crystal from the melt according to the Czochralski technique; forming a silicon wafer from the silicon crystal, wherein the silicon wafer includes a front surface and a back surface; placing the silicon wafer into a deposition chamber; heating the wafer; and simultaneously depositing an epitaxial first film of a desired compound onto the front surface of the wafer and a second film of the desired compound onto the back surface of the wafer.
摘要翻译： 提供了一种制造具有强吸入位置和低浓度表面缺陷的硅晶片的方法。 该方法包括向坩埚中加入多晶硅; 向坩埚中加入含氮掺杂剂; 加热坩埚以形成氮掺杂的硅熔体; 根据Czochralski技术从熔体中拉出硅晶体; 从所述硅晶体形成硅晶片，其中所述硅晶片包括前表面和后表面; 将硅晶片放入沉积室; 加热晶片; 并将所需化合物的外延第一膜同时沉积到晶片的前表面上，并将所需化合物的第二膜沉积到晶片的背面上。
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