公开(公告)号：US06231667B1

公开(公告)日：2001-05-15

申请号：US09200867

申请日：1998-11-27

申请人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

发明人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

IPC分类号： C30B1906

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06

摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.

摘要翻译： 浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作 在退火室中进行与上述基板不同的另一基板。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为 在退火室中进行。 这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。 此外，还提供了液相生长方法。

公开(公告)号：US06273946B1

公开(公告)日：2001-08-14

申请号：US08050078

申请日：1993-05-05

申请人： Kazuhiro Kurata ,  Hajime Nakamura ,  Hiroshi Tomida

发明人： Kazuhiro Kurata ,  Hajime Nakamura ,  Hiroshi Tomida

IPC分类号： C30B1906

CPC分类号： C30B19/064

摘要： A used melt receptacle 40, a holder 60 for the alignment of crystalline substrates and a melt receptacle 20 are piled up in this order along a vertically extending central axis. A plurality of melt reservoirs 21a to 21d for different kinds of melts are disposed in the melt receptacle 20 concentrically about the central axis, while a plurality of used melt reservoirs are disposed in the used melt receptacle 40 in the same way. The supply of each melt from the corresponding melt reservoir 21a to 21d to the receiving cavity 63 of the holder 60 is changed by a cover 65, in which a melt supply hole 66 is formed, rotatable together with the holder 60. The melt used for crystal growth is discharged from the holder 60 to the used melt receptacle 40 through a cover 42 having used melt dropping holes 43a to 43d. Since the melt fills the receiving cavity 63 while partially remaining in the corresponding melt reservoir 21a to 21d, neither oxide films nor microcrystals are introduced into the receiving cavity 63. Hereby, a multi-layered crystal grows on the surface of each crystalline substrate without the harmful influence of the oxide films and the microcrystals.

摘要翻译： 使用的熔体容器40，用于对准结晶衬底的保持器60和熔体容器20沿着垂直延伸的中心轴依次堆积。 用于不同种类的熔体的多个熔体储存器21a至21d在熔体容器20中围绕中心轴线同心地设置，而多个使用的熔体储存器以相同的方式设置在所使用的熔体容器40中。 通过其中形成有熔体供给孔66的盖65与保持器60一起旋转，将来自相应的熔体储存器21a至21d的每个熔体的供应改变为保持器60的容纳腔63。 晶体生长通过具有使用的熔滴点孔43a至43d的盖42从保持器60排出到使用的熔体容器40。 由于熔体填充接收腔63而部分保留在相应的熔体储存器21a至21d中，所以氧化物膜和微晶都不会被引入到容纳腔63中。因此，多层晶体在每个晶体衬底的表面上生长， 氧化膜和微晶的有害影响。