公开(公告)号：US06447606B2

公开(公告)日：2002-09-10

申请号：US09320335

申请日：1999-05-26

申请人： Minoru Imaeda ,  Takashi Yoshino

发明人： Minoru Imaeda ,  Takashi Yoshino

IPC分类号： C30B2812

CPC分类号： G02F1/377 ,  C30B23/02 ,  C30B29/30 ,  G02F1/3551 ,  G02F2201/307 ,  G02F2202/20 ,  Y10S117/904 ,  Y10S117/918

摘要： A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.

摘要翻译： 一种由铌酸锂钾 - 钾酸钾固溶体的单晶制成的单晶膜或铌酸锂钾的单晶的方法，包括以下步骤：制备由单晶膜材料制成的靶 制备由铌酸锂钾锂铌酸钾固溶体的单晶或铌酸锂钾的单晶构成的基体，照射靶，通过解离和蒸发来气化构成靶的分子，并外延生长单晶 电影在基础上。

公开(公告)号：US06706114B2

公开(公告)日：2004-03-16

申请号：US09862108

申请日：2001-05-21

申请人： Stephan Mueller

发明人： Stephan Mueller

IPC分类号： C30B2812

CPC分类号： C30B23/00 ,  C30B23/025 ,  C30B29/36 ,  Y10S117/911

摘要： Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.