公开(公告)号：US06169307A

公开(公告)日：2001-01-02

申请号：US09206560

申请日：1998-12-08

申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

IPC分类号： G01L29788

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

摘要翻译： 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上，介于其间的中间扩散层。 存储晶体管包括：栅极绝缘膜，具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间，利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果，可以获得更高的可靠性，并且可以在较低的电压下进行重写。 此外，由于提供了选择晶体管，所以也可以在较低的电压下执行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件，实现了在各自的较低电压下的可靠性的改善和重写和读取操作。