利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.034 秒)

    Nonvolatile semiconductor memory device comprising a memory transistor, a select transistor, and an intermediate diffusion layer
    1.
    发明授权
    Nonvolatile semiconductor memory device comprising a memory transistor, a select transistor, and an intermediate diffusion layer 有权
    包括存储晶体管，选择晶体管和中间扩散层的非易失性半导体存储器件

    公开(公告)号：US06169307A

    公开(公告)日：2001-01-02

    申请号：US09206560

    申请日：1998-12-08

    申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    IPC分类号： G01L29788

    CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

    摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

    摘要翻译： 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上，介于其间的中间扩散层。 存储晶体管包括：栅极绝缘膜，具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间，利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果，可以获得更高的可靠性，并且可以在较低的电压下进行重写。 此外，由于提供了选择晶体管，所以也可以在较低的电压下执行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件，实现了在各自的较低电压下的可靠性的改善和重写和读取操作。

    Nonvolatile semiconductor memory device and method for driving the same
    2.
    发明授权
    Nonvolatile semiconductor memory device and method for driving the same 失效
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US06377490B1

    公开(公告)日：2002-04-23

    申请号：US09677844

    申请日：2000-10-03

    申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    IPC分类号： G11C1604

    CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

    摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower volt age. Also, since the select transistor is provided, reading c an also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

    摘要翻译： 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上，介于其间的中间扩散层。 存储晶体管包括：栅极绝缘膜，具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间，利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果，可以获得更高的可靠性并且可以在较低的电压时间进行重写。 此外，由于提供了选择晶体管，因此也可以在较低的电压下进行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件，实现了在各自的较低电压下的可靠性的改善和重写和读取操作。

    Nonvolatile semiconductor memory device and method for driving the same
    3.
    发明授权
    Nonvolatile semiconductor memory device and method for driving the same 有权

    公开(公告)号：US06657893B2

    公开(公告)日：2003-12-02

    申请号：US10050965

    申请日：2002-01-22

    申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

    IPC分类号： G11C1604

    CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

    摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

    Method for fabricating semiconductor device using a CVD insulator film
    4.
    发明授权
    Method for fabricating semiconductor device using a CVD insulator film 有权
    使用CVD绝缘膜制造半导体器件的方法

    公开(公告)号：US06472281B2

    公开(公告)日：2002-10-29

    申请号：US09238584

    申请日：1999-01-28

    申请人： Hiroyuki Doi ,  Yasushi Okuda ,  Keita Takahashi ,  Nobuyuki Tamura

    发明人： Hiroyuki Doi ,  Yasushi Okuda ,  Keita Takahashi ,  Nobuyuki Tamura

    IPC分类号： H01L21336

    CPC分类号： H01L29/66825 ,  H01L21/2652 ,  H01L21/28273 ,  H01L21/31612 ,  H01L29/6656 ,  H01L29/6659

    摘要： A gate insulator film and a gate electrode are formed on an Si substrate, and a CVD insulator film is deposited thereon to cover the gate electrode. Then, arsenic ions are implanted into the Si substrate from above the CVD insulator film to form LDD layers. After sidewall spacers have been formed over the side faces of the gate electrode with the CVD insulator film interposed therebetween, source/drain layers are formed. Since the LDD layers are formed by implanting dopant ions through the CVD insulator film, the passage of arsenic ions through the ends of the gate electrode can be suppressed. As a result, a semiconductor device suitable for miniaturization can be formed, while suppressing deterioration in insulating properties of the gate oxide film due to the passage of dopant ions through the ends of the gate electrode.

    摘要翻译： 在Si衬底上形成栅极绝缘体膜和栅电极，并在其上沉积CVD绝缘膜以覆盖栅电极。 然后，从CVD绝缘膜上方将砷离子注入Si衬底中以形成LDD层。 在栅电极的侧面上形成有侧壁间隔物之后，CVD绝缘体膜之间形成有源极/漏极层。 由于通过CVD绝缘膜注入掺杂剂离子形成LDD层，因此能够抑制砷离子通过栅电极的端部。 结果，可以形成适合于小型化的半导体器件，同时抑制由于掺杂剂离子通过栅电极的端部而导致的栅极氧化膜的绝缘性能的劣化。

    Strut mount
    7.
    发明授权
    Strut mount 有权
    支柱安装

    公开(公告)号：US07350779B2

    公开(公告)日：2008-04-01

    申请号：US11222972

    申请日：2005-09-12

    申请人： Nobuyuki Tamura

    发明人： Nobuyuki Tamura

    IPC分类号： F16F7/00 ,  F16F9/54

    CPC分类号： B60G13/003 ,  B60G15/067 ,  B60G2204/128 ,  B60G2204/45 ,  B60G2204/4502

    摘要： A strut mount capable of reducing the weight and of intensifying the strength and having a good durability is provided. It comprises an inner cylinder, a vibration isolating base body and a pair of upper and lower brackets. The lower bracket is fabricated from aluminum alloy and includes a peripheral wall portion, a bottom wall portion and a first attachment flange while the upper bracket includes a second attachment flange and a lid wall portion. The first attachment flange has plural first through-holes for inserting plural attachment members, the second attachment flange has plural second through-holes for inserting the plural attachment members, and flange portions around the first through-holes of the first attachment flange bulge at their undersides to form respective thick-walled portions.

    摘要翻译： 提供了能够减轻重量并增强强度并具有良好耐久性的支柱安装件。 它包括内筒，隔振基体和一对上下托架。 下支架由铝合金制成，并且包括周壁部分，底壁部分和第一附接凸缘，而上托架包括第二附接凸缘和盖壁部分。 第一安装凸缘具有用于插入多个安装构件的多个第一通孔，第二安装凸缘具有用于插入多个安装构件的多个第二通孔，并且在第一安装凸缘的第一安装凸缘的第一通孔周围的凸缘部分 下面形成相应的厚壁部分。

    Transmission apparatus and a method for transmitting data in a data transmission system
    9.
    发明授权
    Transmission apparatus and a method for transmitting data in a data transmission system 失效

    公开(公告)号：US06992977B2

    公开(公告)日：2006-01-31

    申请号：US10036278

    申请日：2001-11-07

    申请人： Nobuyuki Tamura ,  Hiroaki Nagao ,  Sotohiro Kobayashi

    发明人： Nobuyuki Tamura ,  Hiroaki Nagao ,  Sotohiro Kobayashi

    IPC分类号： H04L1/00

    CPC分类号： H04L12/6418 ,  H04L41/064

    摘要： A transmission apparatus includes a reception line selecting unit, a communication confirming frame transmitting unit, a communication confirming table, and a reception line deciding unit. The reception line selecting unit selects one of several reception lines each formed by the synchronous network. The frame transmitting unit transmits a communication confirming frame to the synchronous network at least at a predetermined period. The communication confirming table stores each reception time of the communication confirming frame received through the synchronous network. The deciding unit decides occurrence of failure on the reception line corresponding to the reception time when a difference between a reception time stored in the table and a present time at the predetermined period exceeds a predetermined value, and transmits instructions for switching the reception line to the reception line selecting unit.

    System for connection and disconnection in multipoint conference system of cascade configuration
    10.
    发明授权
    System for connection and disconnection in multipoint conference system of cascade configuration 失效
    级联配置多点会议系统连接断开系统

    公开(公告)号：US5737010A

    公开(公告)日：1998-04-07

    申请号：US333507

    申请日：1994-11-02

    申请人： Takako Yachi ,  Nobuyuki Tamura ,  Kazuto Ban ,  Tohru Andoh

    发明人： Takako Yachi ,  Nobuyuki Tamura ,  Kazuto Ban ,  Tohru Andoh

    IPC分类号： H04N7/15

    CPC分类号： H04N7/152

    摘要： A system for connection and disconnection in a multipoint conference system of a cascade configuration, wherein when a list of line numbers of the MCUs and terminals engaging in the conference is input from an input unit of an MCU, a call origination/disconnection table is prepared comprised of the line numbers. When the table is prepared, a call origination/disconnection administrative unit identifies the terminals under the MCU and the other adjoining MCUs, calls and establishes a connection through lines, and, when the connections are completed, circulates a call origination/disconnection table to the other connected MCUs. These MCUs in turn then calls their terminals and their adjoining MCUs and so on until the end MCUs. Further, use is made of a connection list in which connection flags and the order of connection are successively written and use is made of a conference configuration list indicating the actual connections of the MCUs. This enables all the television conference terminals to be automatically connected and disconnected from a single location and enables MCUs which have become unnecessary to be automatically recognized and disconnected.

    摘要翻译： 一种用于级联配置的多点会议系统中的连接和断开的系统，其中当从MCU的输入单元输入参与会议的MCU和终端的线路列表时，准备呼叫发起/断开表 由行号组成。 当准备表时，呼叫发起/断开管理单元识别MCU下的终端和其他相邻的MCU，通过线路呼叫和建立连接，并且当连接完成时，将呼叫发起/断开连接表循环到 其他连接的MCU。 这些MCU然后又呼叫其终端及其邻接的MCU等等，直到结束MCU。 此外，使用其中连接标志和连接顺序被连续写入的连接列表，并且使用指示MCU的实际连接的会议配置列表。 这使得所有电视会议终端能够从单个位置自动连接和断开连接，并且使得不必要的MCU被自动识别和断开。