公开(公告)号：US06657893B2

公开(公告)日：2003-12-02

申请号：US10050965

申请日：2002-01-22

申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

IPC分类号： G11C1604

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

公开(公告)号：US06169307A

公开(公告)日：2001-01-02

申请号：US09206560

申请日：1998-12-08

申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

IPC分类号： G01L29788

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

摘要翻译： 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上，介于其间的中间扩散层。 存储晶体管包括：栅极绝缘膜，具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间，利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果，可以获得更高的可靠性，并且可以在较低的电压下进行重写。 此外，由于提供了选择晶体管，所以也可以在较低的电压下执行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件，实现了在各自的较低电压下的可靠性的改善和重写和读取操作。

公开(公告)号：US06377490B1

公开(公告)日：2002-04-23

申请号：US09677844

申请日：2000-10-03

申请人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

发明人： Keita Takahashi ,  Masafumi Doi ,  Hiroyuki Doi ,  Nobuyuki Tamura ,  Yasushi Okuda

IPC分类号： G11C1604

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115

摘要： A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower volt age. Also, since the select transistor is provided, reading c an also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.

摘要翻译： 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上，介于其间的中间扩散层。 存储晶体管包括：栅极绝缘膜，具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间，利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果，可以获得更高的可靠性并且可以在较低的电压时间进行重写。 此外，由于提供了选择晶体管，因此也可以在较低的电压下进行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件，实现了在各自的较低电压下的可靠性的改善和重写和读取操作。

公开(公告)号：US06472281B2

公开(公告)日：2002-10-29

申请号：US09238584

申请日：1999-01-28

申请人： Hiroyuki Doi ,  Yasushi Okuda ,  Keita Takahashi ,  Nobuyuki Tamura

发明人： Hiroyuki Doi ,  Yasushi Okuda ,  Keita Takahashi ,  Nobuyuki Tamura

IPC分类号： H01L21336

CPC分类号： H01L29/66825 ,  H01L21/2652 ,  H01L21/28273 ,  H01L21/31612 ,  H01L29/6656 ,  H01L29/6659

摘要： A gate insulator film and a gate electrode are formed on an Si substrate, and a CVD insulator film is deposited thereon to cover the gate electrode. Then, arsenic ions are implanted into the Si substrate from above the CVD insulator film to form LDD layers. After sidewall spacers have been formed over the side faces of the gate electrode with the CVD insulator film interposed therebetween, source/drain layers are formed. Since the LDD layers are formed by implanting dopant ions through the CVD insulator film, the passage of arsenic ions through the ends of the gate electrode can be suppressed. As a result, a semiconductor device suitable for miniaturization can be formed, while suppressing deterioration in insulating properties of the gate oxide film due to the passage of dopant ions through the ends of the gate electrode.

摘要翻译： 在Si衬底上形成栅极绝缘体膜和栅电极，并在其上沉积CVD绝缘膜以覆盖栅电极。 然后，从CVD绝缘膜上方将砷离子注入Si衬底中以形成LDD层。 在栅电极的侧面上形成有侧壁间隔物之后，CVD绝缘体膜之间形成有源极/漏极层。 由于通过CVD绝缘膜注入掺杂剂离子形成LDD层，因此能够抑制砷离子通过栅电极的端部。 结果，可以形成适合于小型化的半导体器件，同时抑制由于掺杂剂离子通过栅电极的端部而导致的栅极氧化膜的绝缘性能的劣化。

公开(公告)号：US06753222B2

公开(公告)日：2004-06-22

申请号：US10271879

申请日：2002-10-15

申请人： Ken Mimuro ,  Hiroyuki Doi ,  Yasushi Okuda

发明人： Ken Mimuro ,  Hiroyuki Doi ,  Yasushi Okuda

IPC分类号： H01L21336

CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11534

摘要： A method for forming a semiconductor device is provided that allows a desirable semiconductor device to be obtained by preventing a gate electrode of a non-volatile semiconductor memory from having an abnormal shape and the surfaces of high concentration source and drain regions of the non-volatile semiconductor memory from being worn away. The method includes a first step of forming a non-volatile semiconductor memory in a first region of a substrate of the semiconductor device and a second step of forming a semiconductor device in a second region on the substrate. The non-volatile semiconductor memory includes a first gate including a tunnel insulating film, a floating gate electrode, a capacitor insulating film, and a control gate electrode, and the semiconductor device includes a second gate including a gate insulating film and a gate electrode. In this method, during patterning of the second gate, a surface of the first gate is covered with a protective film that hardly can be etched by an etchant used for the patterning of the second gate.

摘要翻译： 提供一种用于形成半导体器件的方法，其通过防止非易失性半导体存储器的栅电极具有异常形状并且使非挥发性的高浓度源极和漏极区域的表面能够获得期望的半导体器件 半导体存储器被磨损掉。 该方法包括在半导体器件的衬底的第一区域中形成非易失性半导体存储器的第一步骤和在衬底上的第二区域中形成半导体器件的第二步骤。 非易失性半导体存储器包括：第一栅极，其包括隧道绝缘膜，浮栅电极，电容绝缘膜和控制栅电极，并且所述半导体器件包括包括栅极绝缘膜和栅电极的第二栅极。 在该方法中，在图案化第二栅极期间，第一栅极的表面被几乎不能被用于第二栅极图案化的蚀刻剂所蚀刻的保护膜覆盖。

公开(公告)号：US08883072B2

公开(公告)日：2014-11-11

申请号：US12551884

申请日：2009-09-01

申请人： Jun Sato ,  Shinya Imano ,  Hiroyuki Doi

发明人： Jun Sato ,  Shinya Imano ,  Hiroyuki Doi

IPC分类号： C21D1/18 ,  F01D5/06 ,  B23K35/30 ,  C22F1/10 ,  B23K35/00 ,  C22C19/05 ,  C22C38/00 ,  C22C30/00

CPC分类号： C22C19/055 ,  B23K35/004 ,  B23K35/304 ,  B23K2101/001 ,  C22C19/056 ,  C22F1/10 ,  F01D5/063 ,  Y02T50/671

摘要： The present invention provides, in a γ′ phase precipitation strengthening type Ni-base alloy, an alloy excellent in heat treatment capability and weldability and suitable for joint with a ferritic steel. Further, the present invention provides a welded turbine rotor having the strength, ductility, and toughness simultaneously over the whole welded structure when a precipitation strengthening type Ni-base alloy having a heatproof temperature of 675° C. or higher is joined to a ferritic steel.A Ni-base alloy according to the present invention contains cobalt, chromium, aluminum, carbon, boron, and at least either tungsten or molybdenum with the remainder being nickel and inevitable impurities, having an alloy composition including 12 to 25 percent by mass of Co, 10 to 18 percent by mass of Cr, 2.0 to 3.6 percent by mass of Al, 0.01 to 0.15 percent by mass of C, 0.001 to 0.03 percent by mass of B, the total amount of tungsten and molybdenum being 5.0 to 10 percent by mass.A welded turbine rotor is structured by joining or building up by welding a second Ni-base alloy to a first Ni-base alloy that a γ′ phase solid solution temperature thereof is 900° C. or higher and a creep fracture strength at 675° C. is 100 MPa or more, and further welding a ferritic steel to the second Ni-base alloy. The second Ni-base alloy is a γ′ phase (Ni3Al) precipitation strengthening type Ni-base alloy, a γ′ phase solid solution temperature thereof is 850° C. or lower.

摘要翻译： 本发明在γ-相析出强化型Ni基合金中提供了热处理能力和焊接性优异的合金，适用于与铁素体钢接合的合金。 此外，本发明提供了一种在整个焊接结构中具有强度，延展性和韧性的焊接式涡轮转子，当耐热温度为675℃以上的析出强化型Ni基合金与铁素体钢 。 根据本发明的镍基合金包含钴，铬，铝，碳，硼，以及至少钨或钼，其余为镍和不可避免的杂质，其合金组成包含12〜25质量％的Co ，10〜18质量％的Cr，2.0〜3.6质量％的Al，0.01〜0.15质量％的C，0.001〜0.03质量％的B，钨和钼的总量为5.0〜10质量％ 质量 焊接的涡轮转子通过将第二Ni基合金焊接到γ'相固相温度为900℃以上的第一Ni基合金和675°的蠕变断裂强度下， C为100MPa以上，进一步将铁素体钢焊接到第二Ni基合金。 第二Ni基合金是γ'相（Ni3Al）析出强化型Ni基合金，γ'相固溶温度为850℃以下。

公开(公告)号：US08524149B2

公开(公告)日：2013-09-03

申请号：US12728292

申请日：2010-03-22

申请人： Jun Sato ,  Shinya Imano ,  Hiroyuki Doi

发明人： Jun Sato ,  Shinya Imano ,  Hiroyuki Doi

IPC分类号： C22C19/05 ,  C22C30/00

CPC分类号： C22C19/055

摘要： A nickel base alloy includes: by mass, 0.001 to 0.1% of carbon; 12 to 23% of chromium; 15 to 25% of cobalt; 3.5 to 5.0% of aluminum; 4 to 12% of molybdenum; 0.1 to 7.0% of tungsten; and a total amount of Ti, Ta and Nb being not more than 0.5%. A parameter Ps represented by a formula (1) shown below is 0.6 to 1.6, Ps=−7×[C]−0.1×[Mo]+0.5×[Al]  (1) where [C] indicates an amount of carbon; [Mo] indicates an amount of molybdenum; and [Al] indicates an amount of aluminum, by mass percent.

摘要翻译： 镍基合金包括：质量计，0.001〜0.1％的碳; 12〜23％的铬; 15〜25％的钴; 3.5〜5.0％的铝; 4〜12％的钼; 0.1〜7.0％的钨; Ti，Ta和Nb的总量不大于0.5％。 由下式（1）表示的参数Ps为0.6〜1.6，Ps = -7×[C] -0.1×[Mo] + 0.5×[Al]（1）其中，[C]表示碳数; [Mo]表示钼的量; 和[Al]表示铝的质量％。

公开(公告)号：US08512488B2

公开(公告)日：2013-08-20

申请号：US11836900

申请日：2007-08-10

申请人： Shinya Imano ,  Hirotsugu Kawanaka ,  Hiroyuki Doi ,  Tatsuya Takahashi ,  Tsukasa Azuma ,  Koji Kajikawa

发明人： Shinya Imano ,  Hirotsugu Kawanaka ,  Hiroyuki Doi ,  Tatsuya Takahashi ,  Tsukasa Azuma ,  Koji Kajikawa

IPC分类号： C22F1/10 ,  C22C19/05 ,  F01D5/14

CPC分类号： C22C19/05 ,  C22F1/10

摘要： An Ni—Fe based superalloy forging material including 30 to 40 wt % of Fe, 14 to 16 wt % of Cr, 1.2 to 1.7 wt % of Ti, 1.1 to 1.5 wt % of Al, 1.9 to 2.2 wt % of Nb, 0.05 wt % or less of C and the remainder of Ni and inevitable impurities is solution-treated and aged, and thereby γ′ phase (Ni3Al) having an initial mean particle size of about 50 to about 100 nm is precipitated. This superalloy is excellent in high-temperature strength and high-temperature ductility and can produce a large forged product of 10 ton or more. Therefore, this material is suitable for use as the material of a steam turbine rotor having a main steam temperature of 650° C. or more.

摘要翻译： 包含Fe：30〜40重量％，Cr：14〜16重量％，Ti：1.2〜1.7重量％，Al：1.1〜1.5重量％，Nb：1.9〜2.2重量％，Ni： 重量％以下的C和余量的Ni和不可避免的杂质进行溶液处理和老化，由此沉淀出初始平均粒度为约50〜约100nm的γ'相（Ni3Al）。 该超合金具有优异的高温强度和高温延展性，可生产10吨以上的大型锻造产品。 因此，该材料适用于主蒸汽温度为650℃以上的汽轮机转子的材料。

公开(公告)号：US08444778B2

公开(公告)日：2013-05-21

申请号：US12675688

申请日：2008-08-29

申请人： Toshihiro Uehara ,  Takehiro Ohno ,  Akihiro Toji ,  Takashi Sato ,  Gang Bao ,  Shinya Imano ,  Hiroyuki Doi

发明人： Toshihiro Uehara ,  Takehiro Ohno ,  Akihiro Toji ,  Takashi Sato ,  Gang Bao ,  Shinya Imano ,  Hiroyuki Doi

IPC分类号： C22C19/05 ,  C22F1/10

CPC分类号： C22C19/055 ,  C22F1/10 ,  F28F21/083

摘要： Disclosed is a low-thermal-expansion Ni-based super-heat-resistant alloy for a boiler, which has excellent high-temperature strength. The alloy can be welded without the need of carrying out any aging treatment. The alloy has a Vickers hardness value of 240 or less. The alloy comprises (by mass) C in an amount of 0.2% or less, Si in an amount of 0.5% or less, Mn in an amount of 0.5% or less, Cr in an amount of 10 to 24%, one or both of Mo and W in such an amount satisfying the following formula: Mo+0.5 W=5 to 17%, Al in an amount of 0.5 to 2.0%, Ti in an amount of 1.0 to 3.0%, Fe in an amount of 10% or less, and one or both of B and Zr in an amount of 0.02% or less (excluding 0%) for B and in an amount of 0.2% or less (excluding 0%) for Zr, with the remainder being 48 to 78% of Ni and unavoidable impurities.

摘要翻译： 公开了一种用于锅炉的低热膨胀Ni基超耐热合金，其具有优异的高温强度。 可以焊接合金，而不需要进行任何时效处理。 该合金的维氏硬度值为240以下。 该合金含有0.2质量％以下的Si（以质量计），0.5％以下的Si，0.5％以下的Mn，10〜24％的Cr，1种或2种 的Mo和W的量满足下式：Mo + 0.5W = 5〜17％，Al为0.5〜2.0％，Ti为1.0〜3.0％，Fe为10％ 以下的B和Zr中的一种或两种，B的含量为0.02％以下（不包括0％），Zr的含量为0.2％以下（不含0％），余量为48〜78 ％的Ni和不可避免的杂质。

公开(公告)号：US08043068B2

公开(公告)日：2011-10-25

申请号：US11206131

申请日：2005-08-18

申请人： Shinya Imano ,  Hiroyuki Doi ,  Isao Takehara ,  Shigeo Sakurai

发明人： Shinya Imano ,  Hiroyuki Doi ,  Isao Takehara ,  Shigeo Sakurai

IPC分类号： F01D5/14

CPC分类号： C22C19/056 ,  C22C19/058 ,  C22F1/10 ,  F01D5/02 ,  F01D25/005

摘要： A Ni—Fe based super alloy having high strength and toughness at high temperatures even when used in high-temperature environments, and a process of producing the super alloy. A turbine disk using the super alloy, a process of producing the turbine disk, a turbine spacer using the super alloy, and a process of producing the turbine spacer, as well as a gas turbine are also provided. The Ni—Fe based super alloy contains not more than 0.03% by weight of C, 14-18% of Cr, 15-45% of Fe, 0.5-2.0% of Al, not more than 0.05% of N, 0.5 to 2.0% of Ti, 1.5-5.0% of Nb, and Ni as a main ingredient.

摘要翻译： 即使在高温环境下使用时，也能够在高温下具有高强度和韧性的Ni-Fe系超合金，以及超合金的制造方法。 还提供了使用超级合金的涡轮盘，制造涡轮盘的方法，使用超级合金的涡轮间隔件，以及制造涡轮间隔件的工艺以及燃气轮机。 Ni-Fe基超合金含有不超过0.03重量％的Cr，14-18％的Cr，15-45％的Fe，0.5-2.0％的Al，不超过0.05的N，0.5-2.0 Ti的％，Nb的1.5〜5.0％，Ni为主要成分。