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公开(公告)号：US08363478B1
公开(公告)日：2013-01-29
申请号：US13017430
申请日：2011-01-31
申请人： Xueshi Yang , Gregory Burd
发明人： Xueshi Yang , Gregory Burd
CPC分类号： G11C16/26 , G11C7/14 , G11C11/5642 , G11C16/28 , G11C16/349 , G11C29/028 , G11C2211/5634
摘要： Apparatuses, methods, and other embodiments associated with group based read reference voltage management in flash memory are described. According to one embodiment, an apparatus includes an interval logic configured to create a finite set of timer intervals, a partition logic configured to selectively assign a Vref value to a set of flash memory cells as a function of a given timer interval during which the set of flash memory cells are programmed, and an adaptation logic configured to selectively adapt a given Vref value associated with a flash memory cell upon determining that the flash memory cell has been read.
摘要翻译： 描述了与闪存中的基于组的读取参考电压管理相关联的装置，方法和其它实施例。 根据一个实施例，一种装置包括间隔逻辑，其被配置为创建有限的一组定时器间隔，分区逻辑被配置为根据给定的定时器间隔来选择性地将一个Vref值分配给一组闪存单元， 闪存单元被编程，并且适配逻辑被配置为在确定闪存单元已经被读取之后选择性地调整与闪存单元相关联的给定Vref值。
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2.发明授权公开(公告)号：US07085167B2
公开(公告)日：2006-08-01
申请号：US11009125
申请日：2004-12-10
申请人： Seok-Heon Lee , Young-Joon Choi , Tae-Gyun Kim
发明人： Seok-Heon Lee , Young-Joon Choi , Tae-Gyun Kim
CPC分类号： G11C16/225
摘要： Method of programming nonvolatile memory devices are provided in which data is programmed into a first plurality of memory cells of the nonvolatile memory device. At the same time associated programming confirmation information is programmed into at least one second memory cell of the nonvolatile memory device. Then, a determination is made as to whether the data was correctly programmed into the first plurality of memory cells based on an evaluation of (1) the threshold voltage distributions of at least some of the first plurality of memory cells and (2) the threshold voltage distribution of the at least one second memory cell. Methods of resuming a data programming operation after an interruption such as a loss of power are also provided.
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