Abstract:
An apparatus and method for detecting ionizing radiation are presented. The apparatus includes a scintillator adapted to convert incident ionizing radiation into light; a photocathode adapted to release photoelectrons in dependence on the light; an electron avalanche amplifier adapted to avalanche amplify the photoelectrons; and a readout arrangement adapted to detect the avalanche amplified electrons. The electron avalanche amplifier in one implementation is a gaseous avalanche amplifier including an array of amplification regions. A protective layer is provided to prevent the avalanche gas from coming into contact with the photocathode.
Abstract:
An image display apparatus includes a nanotube assembly having a plurality of nanotubes arranged in an array. An optical excitation device is provided adjacent to the nanotube assembly. The optical excitation device includes a diffraction grating and a piezoelectric crystal disposed adjacent to the diffraction grating. A radiation source generates a write beam incident to the piezoelectric crystal, a read beam incident to the diffraction grating, and an erase beam incident to the diffraction grating. When voltage is applied to the piezoelectric crystal, the write beam scans across the diffraction grating and forms a grating pattern in the diffraction grating. The read beam reads the grating pattern as a holographic image on the at least one nanotube. The erase beam erases the grating pattern.
Abstract:
Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.
Abstract translation:从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内,并且在光吸收中产生光电子 光电子在光吸收层4内扩散,并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ,光电子的能量大于表面层5中的电子亲和力,因此光电子容易被排出到外部。 这里,光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成,因此 得到具有高量子效率的太阳能型半导体光电阴极1。
Abstract:
The phosphor screen is capable of minimizing the spread of lights in the phosphor screen, so as to restrict fading images and lowering contrast. The phosphor screen comprises a lot of minute phosphor sections. The phosphor sections are respectively enclosed by barriers, which absorb visible lights and have electric conductance, and whose height is equal to or higher than a half of thickness of the phosphor sections. The barriers are made of a material including the particles of an inorganic compound, whose average diameter is 1-8 &mgr;m, and carbon particles, whose average diameter is less than 1 &mgr;m.
Abstract:
The cathode for photo-electron emission 5 is comprised of an alkali metal containing layer 5d made of material for emitting photo-electrons by the entry of light or for emitting secondary electrons by the entry of electrons, such as particles which consist of an alkali antimony compound, on an Ni electrode substrate 5c on which an Al layer 5b is deposited, and has an intermediate layer 5a made of carbon nano-tubes between the alkali metal containing layer 5d and the Ni electrode substrate 5c, therefore the defect density inside the particles is decreased, and the recombining probability of electrons and holes drops remarkably, which improves the quantum efficiency.