Photocathode having A1GaN layer with specified Mg content concentration
    1.
    发明申请
    Photocathode having A1GaN layer with specified Mg content concentration 审中-公开
    具有规定Mg含量浓度的AlGaN层的光电阴极

    公开(公告)号:US20050045866A1

    公开(公告)日:2005-03-03

    申请号:US10961142

    申请日:2004-10-12

    摘要: Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.

    摘要翻译: 从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内,并且在光吸收中产生光电子 光电子在光吸收层4内扩散,并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ,光电子的能量大于表面层5中的电子亲和力,因此光电子容易被排出到外部。 这里,光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成,因此 得到具有高量子效率的太阳能型半导体光电阴极1。

    Photocathode having AlGaN layer with specified Mg content concentration
    2.
    发明授权
    Photocathode having AlGaN layer with specified Mg content concentration 失效
    具有特定Mg含量浓度的AlGaN层的光电阴极

    公开(公告)号:US06831341B2

    公开(公告)日:2004-12-14

    申请号:US10416703

    申请日:2003-05-14

    IPC分类号: H01J134

    摘要: Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.

    摘要翻译: 从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内,并且在光吸收中产生光电子 光电子在光吸收层4内扩散,并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ,光电子的能量大于表面层5中的电子亲和力,因此光电子容易被排出到外部。 这里,光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成,因此 得到具有高量子效率的太阳能型半导体光电阴极1。

    Luminous body, electron beam detector using the same, scanning electron microscope, and mass analysis device
    3.
    发明授权
    Luminous body, electron beam detector using the same, scanning electron microscope, and mass analysis device 有权
    发光体,电子束检测器,扫描电子显微镜和质量分析装置

    公开(公告)号:US08164069B2

    公开(公告)日:2012-04-24

    申请号:US12987341

    申请日:2011-01-10

    IPC分类号: H01J37/244

    摘要: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than μsec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope. In addition, a cap layer 16 contributes to improvement in the persistence rate of light emission in the nitride semiconductor layer 14, so, with this light-emitting body 10, not only high-speed response and high light emission intensity are obtained, but also an excellent persistence rate.

    摘要翻译: 提供了快速响应和高发光强度的发光体,以及使用该发光体的电子束检测器,扫描电子显微镜和质谱仪。 在根据本发明的发光体10中,当响应于电子的入射而形成在衬底12的一个面12a上的氮化物半导体层14发射荧光时,该荧光中的至少一部分透过该衬底 从而从基板的另一面12b发射荧光。 该荧光的响应速度不超过μsec次。 此外,该荧光的发射强度与常规P47荧光体的发射强度几乎相同。 具体地说,利用该发光体10,可以获得对扫描型电子显微镜或质谱仪应用完全满意的响应速度和发光强度。 此外,盖层16有助于提高氮化物半导体层14中的发光持续率,所以利用该发光体10,不仅获得高速响应和高发光强度,而且 持久性很好。

    Transmitting type secondary electron surface and electron tube
    4.
    发明授权
    Transmitting type secondary electron surface and electron tube 失效
    发射型二次电子表面和电子管

    公开(公告)号:US07208874B2

    公开(公告)日:2007-04-24

    申请号:US10507011

    申请日:2003-02-24

    IPC分类号: H01J40/06 H01J43/00

    摘要: A transmission secondary electron emitter is provided which emits secondary electrons generated by the incidence of primary electrons. The transmission secondary electron emitter includes a secondary electron emitting layer which is made of diamond or a material containing diamond as a main component, and of which one surface is the surface of incidence for making the primary electrons incident thereon, and the other surface is the surface of emission for emitting the secondary electrons. Also included is a voltage applying arrangement for applying a predetermined voltage between the surfaces of the incidence and the emission of the secondary electron emitting layer to form an electric field in the secondary electron emitting layer.

    摘要翻译: 提供发射二次电子发射器,其发射由一次电子的入射产生的二次电子。 透射二次电子发射体包括由金刚石制成的二次电子发射层,或以金刚石为主要成分的材料,其中一个表面是使一次电子入射到其上的入射面,另一面为 用于发射二次电子的发射表面。 还包括用于在入射表面和二次电子发射层的发射之间施加预定电压以在二次电子发射层中形成电场的电压施加装置。

    Luminous body, electron beam detector using the same, scanning electron microscope, and mass analysis device
    5.
    发明授权
    Luminous body, electron beam detector using the same, scanning electron microscope, and mass analysis device 有权
    发光体,电子束检测器,扫描电子显微镜和质量分析装置

    公开(公告)号:US07910895B2

    公开(公告)日:2011-03-22

    申请号:US11547807

    申请日:2005-04-07

    IPC分类号: H01J49/02

    摘要: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than μsec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope. In addition, a cap layer 16 contributes to improvement in the persistence rate of light emission in the nitride semiconductor layer 14, so, with this light-emitting body 10, not only high-speed response and high light emission intensity are obtained, but also an excellent persistence rate.

    摘要翻译: 提供了快速响应和高发光强度的发光体,以及使用该发光体的电子束检测器,扫描电子显微镜和质谱仪。 在根据本发明的发光体10中,当响应于电子的入射而形成在衬底12的一个面12a上的氮化物半导体层14发射荧光时,该荧光中的至少一部分透过该衬底 从而从基板的另一面12b发射荧光。 该荧光的响应速度不超过μsec次。 此外,该荧光的发射强度与常规P47荧光体的发射强度几乎相同。 具体地说,利用该发光体10,可以获得对扫描型电子显微镜或质谱仪应用完全满意的响应速度和发光强度。 此外,盖层16有助于提高氮化物半导体层14中的发光持续率,所以利用该发光体10,不仅获得高速响应和高发光强度,而且 持久性很好。

    Luminous Body, Electron Beam Detector Using the Same, Scanning Electron Microscope, and Mass Analysis Device
    6.
    发明申请
    Luminous Body, Electron Beam Detector Using the Same, Scanning Electron Microscope, and Mass Analysis Device 有权
    发光体,使用其的电子束检测器,扫描电子显微镜和质量分析装置

    公开(公告)号:US20080116368A1

    公开(公告)日:2008-05-22

    申请号:US11547807

    申请日:2005-04-07

    摘要: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than μsec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope. In addition, a cap layer 16 contributes to improvement in the persistence rate of light emission in the nitride semiconductor layer 14, so, with this light-emitting body 10, not only high-speed response and high light emission intensity are obtained, but also an excellent persistence rate.

    摘要翻译: 提供了快速响应和高发光强度的发光体,以及使用该发光体的电子束检测器,扫描电子显微镜和质谱仪。 在根据本发明的发光体10中,当响应于电子的入射而形成在衬底12的一个面12a上的氮化物半导体层14发射荧光时,通过该荧光透射中的至少一些荧光 衬底12,从而荧光从衬底的另一个面12bb发射。 该荧光的响应速度不超过音乐顺序。 此外,该荧光的发射强度与常规P47荧光体的发射强度几乎相同。 具体地说,利用该发光体10,可以获得对扫描型电子显微镜或质谱仪应用完全满意的响应速度和发光强度。 此外,盖层16有助于提高氮化物半导体层14中的发光持续率,所以利用该发光体10,不仅获得高速响应和高发光强度,而且 持久性很好。

    Transmission type photoelectric cathode and electron tube
    7.
    发明申请
    Transmission type photoelectric cathode and electron tube 失效
    透射型光电阴极和电子管

    公开(公告)号:US20050174052A1

    公开(公告)日:2005-08-11

    申请号:US10504979

    申请日:2003-02-24

    摘要: A transmission type photocathode of the present invention comprises a light absorption layer 1 formed of diamond or a material containing diamond as a main component, a supporting frame 21 for reinforcing the mechanical strength of the light absorption layer 1, a first electrode 31 provided at the plane of incidence of the light absorption layer 1, and a second electrode 32 provided at the plane of emission of the light absorption layer 1. A voltage is applied between the plane of incidence and plane of emission of the light absorption layer 1 to form an electric field in the light absorption layer 1. When light to be detected is made incident and photoelectrons occur in the light absorption layer 1, the photoelectrons are accelerated to the plane of emission by the electric field formed in the light absorption layer 1, and emitted to the outside of the transmission type photocathode.

    摘要翻译: 本发明的透射型光电阴极包括由金刚石或含有金刚石作为主要成分的材料形成的光吸收层1,用于增强光吸收层1的机械强度的支撑框架21,设置在该光吸收层1上的第一电极31 光吸收层1的入射面和设置在光吸收层1的发射平面上的第二电极32。 在光吸收层1的入射平面和发光面之间施加电压,以在光吸收层1中形成电场。 当被检测的光入射并且在光吸收层1中出现光电子时,光电子通过形成在光吸收层1中的电场而被加速到发射平面,并且发射到透射型光电阴极的外部。

    Transmitting type secondary electron surface and electron tube
    8.
    发明申请
    Transmitting type secondary electron surface and electron tube 失效
    发射型二次电子表面和电子管

    公开(公告)号:US20050104527A1

    公开(公告)日:2005-05-19

    申请号:US10507011

    申请日:2003-02-24

    摘要: The transmission secondary electron emitter according to the present invention comprises a secondary electron emitting layer 1 made of diamond or a material containing diamond as a main component, a supporting frame 21 reinforcing the mechanical strength of the secondary electron emitting layer 1, a first electrode 31 formed on the surface of incidence of the secondary electron emitting layer 1, and a second electrode 32 formed on the surface of emission of the secondary electron emitting layer 1. A voltage is applied between the surfaces of the incidence and the emission of the secondary electron emitting layer 1 to form an electric field in the secondary electron emitting layer 1. When the incidence of primary electrons into the secondary electron emitting layer 1 generates secondary electrons in the secondary electron emitting layer 1, the secondary electrons are accelerated in the direction to the surface of the emission by the electric field formed in the secondary electron emitting layer 1, and emitted out of the transmission secondary electron emitter. Therefore, a transmission secondary electron emitter capable of efficiently emitting the secondary electrons by the incidence of the primary electrons, and an electron tube using the same can be achieved.

    摘要翻译: 根据本发明的透射二次电子发射体包括由金刚石或含有金刚石作为主要成分的材料制成的二次电子发射层1,增强二次电子发射层1的机械强度的支撑框架21,第一电极31 形成在二次电子发射层1的入射表面上的第二电极32和形成在二次电子发射层1的发射表面上的第二电极32。 在入射表面和二次电子发射层1的发射之间施加电压,以在二次电子发射层1中形成电场。 当二次电子发射层1中的一次电子的入射在二次电子发射层1中产生二次电子时,二次电子通过在二次电子发射层1中形成的电场沿着发射表面的方向被加速 并从发射二次电子发射器发出。 因此,可以实现能够通过一次电子的入射有效地发射二次电子的透射二次电子发射体和使用其的电子管。

    Polycrystal diamond thin film and photocathode and electron tube using the same
    9.
    发明授权
    Polycrystal diamond thin film and photocathode and electron tube using the same 有权
    多晶金刚石薄膜和光电阴极和电子管使用相同

    公开(公告)号:US07045957B2

    公开(公告)日:2006-05-16

    申请号:US10223378

    申请日:2002-08-20

    IPC分类号: H01J40/06

    摘要: In the polycrystal diamond thin film in accordance with the present invention, the average particle size is at least 1.5 μm and, in a Raman spectrum obtained by Raman spectroscopy, a peak intensity near a wave number of 1580 cm−1 has a ratio of 0.2 or less with respect to a peak intensity near a wave number of 1335 cm−1. The photocathode and electron tube in accordance with the present invention comprise the polycrystal diamond thin film as a light-absorbing layer.

    摘要翻译: 在本发明的多晶金刚石薄膜中,平均粒径为1.5μm以上,通过拉曼光谱法获得的拉曼光谱中,波数为1580cm -1以上的峰强度, SUP>相对于波数为1335cm -1附近的峰值强度具有0.2或更小的比率。 根据本发明的光电阴极和电子管包括多晶金刚石薄膜作为光吸收层。

    Illuminant, and, electron beam detector, scanning electron microscope and mass spectroscope each including the same
    10.
    发明授权
    Illuminant, and, electron beam detector, scanning electron microscope and mass spectroscope each including the same 有权
    光源,和电子束检测器,扫描电子显微镜和质谱仪均包括在内

    公开(公告)号:US07030388B2

    公开(公告)日:2006-04-18

    申请号:US10679517

    申请日:2003-10-07

    IPC分类号: H01J37/244

    摘要: The present invention relates to an illuminant, etc., having a high response speed and a high luminous intensity. The illuminant comprises a substrate and a nitride semiconductor layer provided on one surface of the substrate. The nitride semiconductor layer emits fluorescence in response to incidence of electrons. At least part of the emitted fluorescence passes through the substrate, and then exits from the other surface of the substrate. Generation of the fluorescence is caused by incidence of electrons onto a quantum well structure of the nitride semiconductor layer and recombination of pairs of electrons and holes generated due to electron incidence, and the response speed of fluorescence generation is on the order of nanoseconds or less. Also, the luminous intensity of the fluorescence becomes equivalent to that of a conventional P47 fluorescent substance. Namely, the illuminant has a response speed and a luminous intensity that are sufficient for adaptation to scanning electron microscopes and mass spectroscopes.

    摘要翻译: 本发明涉及具有高响应速度和高发光强度的发光体等。 光源包括衬底和设置在衬底的一个表面上的氮化物半导体层。 氮化物半导体层响应于电子的入射发射荧光。 发射的荧光的至少一部分通过衬底,然后从衬底的另一表面离开。 荧光的产生是由于电子发射到氮化物半导体层的量子阱结构和由于电子入射而产生的电子和电子对的复合而引起的,并且荧光产生的响应速度在数量级以下。 此外,荧光的发光强度等同于常规P47荧光物质的发光强度。 即,发光体具有对扫描电子显微镜和质谱进行适应的响应速度和发光强度。