公开(公告)号：US06350995B1

公开(公告)日：2002-02-26

申请号：US09599772

申请日：2000-06-22

申请人： Chae Gee Sung ,  Jo Gyoo Chul

发明人： Chae Gee Sung ,  Jo Gyoo Chul

IPC分类号： H01L0100

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66765

摘要： A TFT structure having sufficiently low resistance wiring is provided. The present invention prevents the characteristic defects caused by undercuts in a barrier metal layer. In the prior art, the undercuts are formed by a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper. Barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.

摘要翻译： 提供具有足够低电阻布线的TFT结构。 本发明防止了阻挡金属层中的底切引起的特征缺陷。 在现有技术中，通过用于处理由铜组成的源电极和漏电极的步骤来形成底切。 本发明的TFT结构包括在玻璃基板上的栅极电极，栅极绝缘膜，设置在栅极绝缘膜上以与栅电极相对的半导体有源层，形成在半导体的两个边缘部分上的欧姆接触层 有源层以及经由各个欧姆接触层与半导体有源层连接的源极和漏极。 此外，源电极和漏电极由铜形成。 阻挡金属层形成在源电极和漏电极的底表面上方各欧姆接触层的上表面所在的区域上方。