公开(公告)号：US06649936B1

公开(公告)日：2003-11-18

申请号：US09526150

申请日：2000-03-15

申请人： Chae Gee Sung ,  Jo Gyoo Chul ,  Makoto Sasaki ,  Kazuyuki Arai

发明人： Chae Gee Sung ,  Jo Gyoo Chul ,  Makoto Sasaki ,  Kazuyuki Arai

IPC分类号： H01L310392

CPC分类号： H01L27/124 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/66757

摘要： A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.

摘要翻译： 源极线直接连接到由薄膜晶体管衬底中的氧化铟锌构成的源极端子。 栅极线直接连接到由氧化铟锌构成的栅极端子。 或者，用于切换多个像素电极的薄膜晶体管的漏极直接连接到由氧化铟锌构成的像素电极。 这些配置不需要对于传统的薄膜晶体管衬底是必需的钝化膜，并且所得到的薄膜晶体管衬底可以通过减少数量的制造步骤来制造。

公开(公告)号：US06533965B1

公开(公告)日：2003-03-18

申请号：US09718982

申请日：2000-11-22

申请人： Makoto Sasaki ,  Chae Gee Sung ,  Kazuyuki Arai

发明人： Makoto Sasaki ,  Chae Gee Sung ,  Kazuyuki Arai

IPC分类号： H01B108

CPC分类号： C23C14/5806 ,  C03C17/2453 ,  C03C17/253 ,  C03C2217/211 ,  C03C2217/215 ,  C03C2217/216 ,  C03C2217/23 ,  C23C14/086 ,  C23C14/3414 ,  C23C30/00 ,  G02F1/13439 ,  H01B1/08

摘要： A transparent electrically conductive oxide film is composed of a compound oxide containing indium oxide, tin oxide, and zinc oxide and includes a connecting section, in which the tin content is higher than the zinc content at least in connecting section, and at least the connection section has crystallinity. Alternatively, in the transparent electrically conductive oxide film, the atomic percentage of zinc to the total of zinc, indium, and tin is in the range of about 1 at % through about 9 at %, the atomic ratio of tin to zinc is about 1 or more, the atomic percentage of tin to the total of zinc, indium, and tin is about 20 at % or less, and at least a portion thereof has crystallinity. An electronic apparatus provided with such a transparent electrically conductive oxide film as at least a portion of the electric circuit thereof, a target for forming a transparent electrically conductive oxide film, and a method for fabricating a substrate provided with a transparent electrically conductive oxide film are also disclosed.

摘要翻译： 透明导电氧化物膜由包含氧化铟，氧化锡和氧化锌的复合氧化物组成，并且包括至少在连接部分中锡含量高于锌含量的连接部分，并且至少连接 截面具有结晶度。 或者，在透明导电氧化物膜中，锌与锌，铟和锡的总量的原子百分比在约1at％至约9at％的范围内，锡与锌的原子比为约1 以上，锡与锌，铟和锡的合计的原子百分比为约20原子％以下，其至少一部分具有结晶性。 一种具有至少一部分电路的透明导电氧化膜的电子设备，形成透明导电氧化物膜的靶，以及具有透明导电氧化膜的基板的制造方法， 也披露。

公开(公告)号：US06433764B1

公开(公告)日：2002-08-13

申请号：US09010264

申请日：1998-01-21

申请人： Hiroyuki Hebiguchi ,  Chae Gee Sung

发明人： Hiroyuki Hebiguchi ,  Chae Gee Sung

IPC分类号： G09G336

CPC分类号： G02F1/134363 ,  G02F1/136213 ,  G09G3/3648 ,  G09G2300/0434

摘要： A liquid crystal display of a lateral electric field driving system having a high viewing angle characteristic and a high aperture ratio comprises a pair of substrates disposed with a space therebetween, a liquid crystal filling up the space between the pair of substrates, a plurality of pixel electrodes formed in a plurality of pixel regions on an inner surface of one of the pair of substrates, common electrodes each for creating an electric field of a direction parallel to the inner surface of the substrate in cooperation with each of the plurality of pixel electrodes, and capacitor forming electrodes each formed over and spaced from the pixel electrode so as to form a capacitor in combination with each of the pixel electrodes.

摘要翻译： 具有高视角特性和高开口率的横向电场驱动系统的液晶显示器包括一对在其间设置空间的基板，填充一对基板之间的空间的液晶，多个像素 形成在所述一对基板中的一个基板的内表面上的多个像素区域中的电极，每个所述公共电极用于与所述多个像素电极中的每一个配合地产生平行于所述基板的内表面的方向的电场， 以及形成在像素电极上并与像素电极间隔开的电容器形成电极，以与每个像素电极组合形成电容器。

公开(公告)号：US06432755B1

公开(公告)日：2002-08-13

申请号：US09938068

申请日：2001-08-22

申请人： Chae Gee Sung ,  Jo Gyoo Chul

发明人： Chae Gee Sung ,  Jo Gyoo Chul

IPC分类号： H01L2184

摘要： A TFT structure having sufficiently low resistance wiring is provided, in which characteristic defects thereof caused by undercuts in a barrier metal layer can be prevented, the undercuts formed in a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper, and barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.

公开(公告)号：US06350995B1

公开(公告)日：2002-02-26

申请号：US09599772

申请日：2000-06-22

申请人： Chae Gee Sung ,  Jo Gyoo Chul

发明人： Chae Gee Sung ,  Jo Gyoo Chul

IPC分类号： H01L0100

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66765

摘要： A TFT structure having sufficiently low resistance wiring is provided. The present invention prevents the characteristic defects caused by undercuts in a barrier metal layer. In the prior art, the undercuts are formed by a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper. Barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.

摘要翻译： 提供具有足够低电阻布线的TFT结构。 本发明防止了阻挡金属层中的底切引起的特征缺陷。 在现有技术中，通过用于处理由铜组成的源电极和漏电极的步骤来形成底切。 本发明的TFT结构包括在玻璃基板上的栅极电极，栅极绝缘膜，设置在栅极绝缘膜上以与栅电极相对的半导体有源层，形成在半导体的两个边缘部分上的欧姆接触层 有源层以及经由各个欧姆接触层与半导体有源层连接的源极和漏极。 此外，源电极和漏电极由铜形成。 阻挡金属层形成在源电极和漏电极的底表面上方各欧姆接触层的上表面所在的区域上方。

公开(公告)号：US06211553B1

公开(公告)日：2001-04-03

申请号：US08976963

申请日：1997-11-24

申请人： Chae Gee Sung

发明人： Chae Gee Sung

IPC分类号： H01L2900

CPC分类号： G02F1/1368 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/78621

摘要： A thin-film transistor comprises a semiconductor unit 60 constituted of a channel formation portion 61 and a source region 63 and a drain region 62 sandwiching the channel formation portion 61 therebetween, a transparent pixel electrode 54 made of indium tin oxide, a drain electrode 57 and a source electrode 58 each made of Cr, Mo, Ta or W, and a gate electrode 68 formed on the channel formation portion via a gate insulating layer 58, wherein the drain region and the source region are, respectively, connected with the electrodes through silicide layers 64, 65 formed by diffusion of the any above-mentioned element. A method for making the transistor and a liquid crystal display device comprising the transistor are also disclosed.

摘要翻译： 薄膜晶体管包括由沟道形成部分61和源极区域63以及夹在其间的沟道形成部分61的漏极区域62构成的半导体单元60，由氧化铟锡制成的透明像素电极54，漏极电极57 以及由Cr，Mo，Ta或W构成的源电极58，以及通过栅极绝缘层58形成在沟道形成部上的栅电极68，其中漏极区域和源极区域分别与电极 通过由任何上述元件的扩散形成的硅化物层64,65。 还公开了制造晶体管的方法和包括晶体管的液晶显示装置。

公开(公告)号：US06587170B2

公开(公告)日：2003-07-01

申请号：US09854504

申请日：2001-05-15

申请人： Hyunho Shin ,  Chae Gee Sung ,  Kouji Takashina

发明人： Hyunho Shin ,  Chae Gee Sung ,  Kouji Takashina

IPC分类号： G02F111336

CPC分类号： G02F1/133512 ,  G02F1/134363

摘要： A liquid crystal display device composed of: a first substrate and a second substrates; a liquid crystal layer provided between the first and second substrates; a plurality of pixel regions provided on the surface opposing the second substrate of the first substrate, each of which pixel regions has at least one pixel electrode and a common electrode for cooperatively applying an electric field in a direction along the surface of the first substrate; and a conductive light shielding matrix provided on the surface opposing the first substrate of the second substrate which light shielding matrix has openings each corresponding to a display region of each of the pixel regions and shades non-display regions other than the pixel regions; in which the light shielding matrix and the common electrode are set to substantially the same voltage.

摘要翻译： 一种液晶显示装置，包括：第一基板和第二基板; 设置在第一和第二基板之间的液晶层; 设置在与第一基板的第二基板相对的表面上的多个像素区域，每个像素区域具有至少一个像素电极和用于在沿着第一基板的表面的方向上协同施加电场的公共电极; 以及设置在与所述第二基板的所述第一基板相对的表面上的导电遮光矩阵，所述遮光矩阵具有各自对应于每个所述像素区域的显示区域的开口并遮蔽除所述像素区域之外的非显示区域; 其中遮光矩阵和公共电极被设置为基本上相同的电压。

公开(公告)号：US06278504B1

公开(公告)日：2001-08-21

申请号：US08787463

申请日：1997-01-22

申请人： Chae Gee Sung

发明人： Chae Gee Sung

IPC分类号： G02F1136

CPC分类号： G02F1/1368

摘要： A thin film transistor for liquid crystal display device including a gate electrode 42 formed on a transparent substrate 41, an insulation layer 43 formed to cover the upper surface of the transparent substrate and the gate electrode, a semiconductor layer 46 formed on the insulating layer in confrontation with the gate electrode, an etching stopper layer 44 formed on the semiconductor layer and a source electrode 49 and a drain electrode 50 disposed adjacent to each other in confrontation on both the sides of the semiconductor layer over the etching stopper layer, the semiconductor layer and the insulation layer is arranged such that the gate electrode is formed to such a size as to conceal the semiconductor layer from the transparent substrate side and the line width of the source electrode and the drain electrode is made larger than the width of the semiconductor layer along the same direction as the line width. With this arrangement, there can be provided a thin film transistor for liquid crystal display device capable of suppressing the leak current of the semiconductor layer and lowering the off-current of the thin film transistor and a liquid crystal display device including the thin film transistor.

摘要翻译： 一种用于液晶显示装置的薄膜晶体管，包括形成在透明基板41上的栅电极42，覆盖透明基板的上表面的绝缘层43和栅电极，形成在绝缘层上的半导体层46 与栅极电极对置，在半导体层上形成的蚀刻停止层44和在蚀刻停止层上的半导体层的两侧上相对设置的源电极49和漏电极50，半导体层 并且绝缘层被布置成使得栅极形成为使得半导体层从透明基板侧隐藏起来的尺寸，并且使源电极和漏电极的线宽大于半导体层的宽度 沿与线宽相同的方向。 利用这种布置，可以提供一种能够抑制半导体层的漏电流并降低薄膜晶体管的截止电流的液晶显示装置用薄膜晶体管，以及包含该薄膜晶体管的液晶显示装置。

公开(公告)号：US06271903B1

公开(公告)日：2001-08-07

申请号：US09012041

申请日：1998-01-22

申请人： Hyunho Shin ,  Chae Gee Sung ,  Kouji Takashina

发明人： Hyunho Shin ,  Chae Gee Sung ,  Kouji Takashina

IPC分类号： G02F11333

CPC分类号： G02F1/133512 ,  G02F1/134363

摘要： A liquid crystal display device composed of: a first substrate and a second substrates; a liquid crystal layer provided between the first and second substrates; a plurality of pixel regions provided on the surface opposing the second substrate of the first substrate, each of which pixel regions has at least one pixel electrode and a common electrode for cooperatively applying an electric field in a direction along the surface of the first substrate; and a conductive light shielding matrix provided on the surface opposing the first substrate of the second substrate which light shielding matrix has openings each corresponding to a display region of each of the pixel regions and shades non-display regions other than the pixel regions; in which the light shielding matrix and the common electrode are set to substantially the same voltage.

摘要翻译： 一种液晶显示装置，包括：第一基板和第二基板; 设置在第一和第二基板之间的液晶层; 设置在与第一基板的第二基板相对的表面上的多个像素区域，每个像素区域具有至少一个像素电极和用于在沿着第一基板的表面的方向上协同施加电场的公共电极; 以及设置在与所述第二基板的所述第一基板相对的表面上的导电遮光矩阵，所述遮光矩阵具有各自对应于每个所述像素区域的显示区域的开口并遮蔽除所述像素区域之外的非显示区域; 其中遮光矩阵和公共电极被设置为基本上相同的电压。

公开(公告)号：US6166794A

公开(公告)日：2000-12-26

申请号：US897243

申请日：1997-07-18

申请人： Chae Gee Sung

发明人： Chae Gee Sung

IPC分类号： G02F1/1333 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/1368

摘要： A liquid crystal display device comprises a first substrate, a second substrate disposed opposite to the first substrate, a liquid crystal sealed in a space between the first and the second substrate, gate lines formed in longitudinal rows on the first. substrate, layer insulating film formed over the gate lines, source lines formed in transverse lines on the layer insulating film so as to form a matrix with the gate lines, thin-film transistors each electrically connected to the gate line and the source line, pixel electrodes formed in regions demarcated by the intersecting gate lines and the source lines and connected to the thin-film transistors, respectively, and gate insulating film interposed between the gate electrodes of the thin-film transistors and an active semiconductor layer. The dielectric constant of the gate insulating film being greater than that of the layer insulating film, and the liquid crystal display has a small parasitic capacitance which increases delay in signal transmission.

摘要翻译： 液晶显示装置包括第一基板，与第一基板相对设置的第二基板，密封在第一和第二基板之间的空间中的液晶，在第一基板上形成为纵向行的栅极线。 在栅极线上形成的基板，层间绝缘膜，形成在层间绝缘膜上的横向线上的源极线，以形成具有栅极线的矩阵，每个电连接到栅极线和源极线的薄膜晶体管，像素 在由相交的栅极线和源极线划分并分别连接到薄膜晶体管的区域中形成的电极和介于薄膜晶体管的栅电极和有源半导体层之间的栅极绝缘膜。 栅极绝缘膜的介电常数大于层间绝缘膜的介电常数，液晶显示器具有较小的寄生电容，增加了信号传输的延迟。