公开(公告)号：US07482189B2

公开(公告)日：2009-01-27

申请号：US11896634

申请日：2007-09-04

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L27/25 ,  H01L29/22

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。