公开(公告)号：US07482189B2

公开(公告)日：2009-01-27

申请号：US11896634

申请日：2007-09-04

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L27/25 ,  H01L29/22

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

公开(公告)号：US20080032436A1

公开(公告)日：2008-02-07

申请号：US11896634

申请日：2007-09-04

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

公开(公告)号：US20070012933A1

公开(公告)日：2007-01-18

申请号：US11448832

申请日：2006-06-08

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= β）相对于所述基板的上表面; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

公开(公告)号：US07282746B2

公开(公告)日：2007-10-16

申请号：US11448832

申请日：2006-06-08

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L27/15 ,  H01L29/22

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US07935554B2

公开(公告)日：2011-05-03

申请号：US12407361

申请日：2009-03-19

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L21/302

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US08183068B2

公开(公告)日：2012-05-22

申请号：US12721063

申请日：2010-03-10

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。

公开(公告)号：US07871845B2

公开(公告)日：2011-01-18

申请号：US11808368

申请日：2007-06-08

申请人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

发明人： Suk-ho Yoon ,  Sung-ho Jin ,  Kyoung-kook Kim ,  Jeong-wook Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079

摘要： Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.

摘要翻译： 提供了一种具有提高的效率和功率特性的氮化物基半导体发光器件及其制造方法。 该方法可以包括在衬底上形成牺牲层，在牺牲层上形成钝化层，在钝化层上形成金属氮化物的多个掩蔽点，在钝化层上横向外延生长氮化物基半导体层，使用 掩模点作为掩模，在氮化物基半导体层上形成半导体器件，以及湿蚀刻牺牲层，以从半导体器件分离和/或去除衬底。

公开(公告)号：US20100163912A1

公开(公告)日：2010-07-01

申请号：US12721063

申请日：2010-03-10

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。

公开(公告)号：US20070202624A1

公开(公告)日：2007-08-30

申请号：US11649237

申请日：2007-01-04

申请人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

发明人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0016

摘要： A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

摘要翻译： 提供一种具有改善结构以提高光提取效率的氮化物基半导体发光器件及其制造方法。 该方法包括在衬底上依次形成n包覆层，有源层和p覆盖层的操作; 在所述p覆盖层的上表面上形成多个掩模点; 在所述掩模点之间的所述p覆盖层的部分上形成具有粗糙表面的p接触层; 通过干蚀刻从p接触层的上表面的一部分形成与p接触层的粗糙形状相同的粗糙形状的n包覆层的粗糙的n接触表面到期望的深度 n覆层; 在粗糙的n接触面上形成n电极; 以及在p-接触层上形成p电极。