利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.011 秒)

    Bipolar transistor
    2.
    发明授权
    Bipolar transistor 失效

    公开(公告)号：US06388307B1

    公开(公告)日：2002-05-14

    申请号：US09376352

    申请日：1999-08-18

    申请人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    发明人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    IPC分类号： H01L2782

    CPC分类号： H01L31/1105

    摘要： A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

    Bipolar transistor
    3.
    发明授权
    Bipolar transistor 失效

    公开(公告)号：US06653715B2

    公开(公告)日：2003-11-25

    申请号：US10237674

    申请日：2002-09-10

    申请人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    发明人： Masao Kondo ,  Katsuya Oda ,  Katsuyoshi Washio

    IPC分类号： H01L2782

    CPC分类号： H01L31/1105

    摘要： A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

    Semiconductor device
    4.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06545328B1

    公开(公告)日：2003-04-08

    申请号：US09548633

    申请日：2000-04-12

    申请人： Narihiro Morosawa ,  Hiroshi Iwata

    发明人： Narihiro Morosawa ,  Hiroshi Iwata

    IPC分类号： H01L2782

    CPC分类号： H01L29/41783 ,  H01L21/28035 ,  H01L21/28052 ,  H01L21/32105 ,  H01L21/32155 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/4916 ,  H01L29/665 ,  H01L29/66545

    摘要： A semiconductor device includes an insulating gate field effect transistor including a gate electrode, wherein the gate electrode includes a polycrystalline semiconductor film having a crystal defect density of about 1×1018 cm−3 or less. In certain embodiments, the polycrystalline semiconductor film may be oxidation thermally annealed by subjecting the polycrystalline semiconductor film to thermal treatment in an oxidation atmosphere to carry out oxidization of the polycrystalline semiconductor film and activation of impurities simultaneously.

    摘要翻译： 半导体器件包括具有栅电极的绝缘栅场效应晶体管，其中栅电极包括晶体缺陷密度约为1×1018cm-3或更小的多晶半导体膜。 在某些实施方案中，多晶半导体膜可以通过在多晶半导体膜中在氧化气氛中进行热处理来进行氧化热退火，以进行多晶半导体膜的氧化和同时活化杂质。

    RF power transistor
    5.
    发明授权
    RF power transistor 有权
    射频功率晶体管

    公开(公告)号：US06483170B2

    公开(公告)日：2002-11-19

    申请号：US09975519

    申请日：2001-10-10

    申请人： Ted Johansson

    发明人： Ted Johansson

    IPC分类号： H01L2782

    CPC分类号： H01L23/647 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method for manufacturing a silicon bipolar power high frequency transistor device is disclosed. A transistor device according to the present method is also disclosed. The transistor device assures conditions for maintaining a proper BVCER to avoid collector emitter breakdown during operation. According to the method an integrated resistor is arranged along at least one side of a silicon bipolar transistor on a semiconductor die which constitutes a substrate for the silicon bipolar transistor. The integrated resistor is connected between the base and emitter terminals of the silicon bipolar transistor. The added integrated resistor is a diffused p+ resistor on said semiconductor die or a polysilicon or NiCr resistor placed on top of the isolation layers. In an interdigitated transistor structure provided with integrated emitter ballast resistors the added- resistor or resistors (20) will be manufactured in a step simultaneously as producing the ballast resistors.

    摘要翻译： 公开了一种制造硅双极型高功率高频晶体管器件的方法。 还公开了根据本方法的晶体管器件。 晶体管器件确保维持适当的BVCER的条件，以避免在操作期间的集电极发射极击穿。 根据该方法，在构成硅双极晶体管的衬底的半导体管芯上沿着硅双极晶体管的至少一侧布置集成电阻器。 集成电阻器连接在硅双极晶体管的基极和发射极端子之间。 添加的集成电阻器是在所述半导体管芯上的扩散的p +电阻器或放置在隔离层顶部上的多晶硅或NiCr电阻器。 在配有集成发射极镇流电阻的交错晶体管结构中，加法电阻或电阻（20）将同时制作制造镇流电阻。