摘要:
The effectiveness of reflected light to stabilize the operational characteristics of a semiconductor diode laser varies with the polarization orientation of the reflected light. Stabilization failure can occur if the polarization orientation of the reflected light is orthogonal to the polarization of the light emitted by the laser source. The use of multiple reflectors can reduce the probability of stabilization failure by arranging the reflectors to return to the laser source portions of light having polarization orientations that are statistically independent with respect to each other.
摘要:
A superbroadband or multiwavelength laser transmitter source for wavelength-division multiplexing, two-wavelength interferometry, differential lidar and optical storage applications. Contrary to conventional tunable laser sources that can switch between different lasing wavelengths in a given wavelength band, the superbroadband laser simultaneously emits at multiple wavelengths. The basic idea of this system is to maintain simultaneous lasing operation in an optical active gain medium at different wavelengths. The system uses a novel dispersive cavity. By designing this cavity structure appropriately, the system creates its own microcavities each lasing at a different wavelength within the fluorescence band of the gain medium. Mode competition in the proposed cavity is absent and spectral range of simultaneous multi-frequency generation is considerably enhanced practically to the spectral width of the active media luminescence spectrum. As a result, the radiation of each mode with its own wavelength is amplified in the active media independently from the simultaneous amplification of the rest of the wavelengths.
摘要:
A frequency stabilized laser using an integrated external cavity, comprising a semiconductor laser diode and an optical waveguide installed on the same substrate, and having an optically induced grating formed in the optical waveguide suppresses mode hopping due to a temperature change to stabilize the oscillation frequencies of the laser. A material having a refractive index temperature coefficient opposite in sign to the refractive index temperature coefficient of the semiconductor laser diode is installed on that portion of the optical waveguide between the semiconductor laser diode and the optically induced grating which has been formed by removing an upper cladding and a core, or removing the upper cladding, the core, and a lower cladding.