公开(公告)号：US06566222B2

公开(公告)日：2003-05-20

申请号：US09982294

申请日：2001-10-16

申请人： Scott J. DeBoer

发明人： Scott J. DeBoer

IPC分类号： H04L2120

CPC分类号： H01L28/84 ,  H01L28/55 ,  H01L28/90

摘要： Methods of manufacturing capacitor structures with edge zones that are substantially free of hemispherical grain silicon along the upper edges of the capacitor structures are disclosed. The resulting recessed hemispherical grain silicon layers reduce or prevent separation of particles from the hemispherical grain silicon layer during-subsequent manufacturing processes, thereby reducing defects and increasing throughput. Among the methods of the present invention are methods of forming the capacitor structures in which the silicon layer used to form the hemispherical grain silicon is selectively doped. That selective doping provides an edge zone that does not convert to hemispherical grain silicon during manufacturing.

摘要翻译： 公开了沿着电容器结构的上边缘制造基本上不含半球形硅的边缘区的电容器结构的方法。 所产生的凹陷半球形晶粒硅层在随后的制造工艺期间减少或防止颗粒与半球形晶粒硅层分离，从而减少缺陷并提高生产量。 本发明的方法之一是形成电容器结构的方法，其中用于形成半球形晶粒硅的硅层被选择性掺杂。 该选择性掺杂提供了在制造期间不转化为半球形晶粒硅的边缘区域。