摘要:
An active pixel sensor (APS) that includes circuitry to eliminate artifacts in digital images. The APS includes a comparator for comparing a signal level from a pixel to an adjusted saturation voltage to determine if the pixel is saturated. If the pixel is saturated, the signal output from the pixel is replaced with an analog voltage having a maximum value corresponding to a brightest pixel in the image.
摘要:
A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.