公开(公告)号：US06248133B1

公开(公告)日：2001-06-19

申请号：US08631834

申请日：1996-04-10

申请人： Hiroyoshi Komobuchi ,  Akira Fukumoto ,  Takahiro Yamada ,  Takao Kuroda ,  Yuji Matsuda

发明人： Hiroyoshi Komobuchi ,  Akira Fukumoto ,  Takahiro Yamada ,  Takao Kuroda ,  Yuji Matsuda

IPC分类号： H04M5335

CPC分类号： H01L27/14806

摘要： A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.

摘要翻译： 固态成像装置具有：第一多晶硅层901; 第二多晶硅层902; 光电转换部分或PD 903; 读门904; 在读取栅极下方形成半导体的读通道905（在这种情况下为N层）; P层906，其防止信号电荷错误地进入水平方向相邻的单位像素的VCCD; 限定VCCD的传输通道区域的P层907; 以及VCCD 908，其沿箭头方向传送信号电荷。 单位像素900由单点划线表示。 二维排列的固态成像装置由驱动脉冲phiV1 911，驱动脉冲phiV2 912，驱动脉冲phiV3 913，驱动脉冲phiV4 914，驱动脉冲phiV5 驱动脉冲phiV6 916，驱动脉冲phiV7 917，驱动脉冲phiV8 918。

公开(公告)号：US5451802A

公开(公告)日：1995-09-19

申请号：US145347

申请日：1993-10-29

申请人： Hiroyoshi Komobuchi ,  Takao Kuroda

发明人： Hiroyoshi Komobuchi ,  Takao Kuroda

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H01L29/78

CPC分类号： H01L29/42396

摘要： A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with the insulating film sandwiched therebetween, the electrode layer having high-resistant portions and low-resistant portions alternately provided; and voltage application means for applying a voltage for changing a surface potential of the transfer regions to the low-resistant portions of the electrode layer.

摘要翻译： 提供电荷转移装置，其包括：具有用于传送信号电荷的转移区域的半导体衬底; 形成在半导体衬底上的绝缘膜; 形成在所述转印区域之上的绝缘膜夹在其间的电极层，所述电极层具有高阻抗部分和低阻抗部分交替设置; 以及电压施加装置，用于将转印区域的表面电位改变为电极层的低电阻部分的电压。

公开(公告)号：US5786607A

公开(公告)日：1998-07-28

申请号：US654962

申请日：1996-05-29

申请人： Katsuya Ishikawa ,  Takao Kuroda ,  Yuji Matsuda ,  Masahiko Niwayama ,  Keishi Tachikawa

发明人： Katsuya Ishikawa ,  Takao Kuroda ,  Yuji Matsuda ,  Masahiko Niwayama ,  Keishi Tachikawa

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/14812 ,  H01L27/14825

摘要： A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well and a second p-type well are formed on an N (100) silicon substrate. A vertical CCD n.sup.+ layer is formed in the second p-type well 3. Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate including an upper layer portion of the vertical CCD n.sup.+ layer to form a p.sup.- layer. An isolating portion for isolating photodiode portions from the vertical CCD n.sup.+ layer and a read control portion for controlling the read of charges from the photodiode n layer are simultaneously formed on a portion adjacent to the vertical CCD n.sup.+ layer.

公开(公告)号：US6046069A

公开(公告)日：2000-04-04

申请号：US796887

申请日：1997-02-05

申请人： Katsuya Ishikawa ,  Takao Kuroda ,  Yuji Matsuda ,  Masahiko Niwayama ,  Keishi Tachikawa

发明人： Katsuya Ishikawa ,  Takao Kuroda ,  Yuji Matsuda ,  Masahiko Niwayama ,  Keishi Tachikawa

IPC分类号： H01L27/148 ,  H01L21/00 ,  H01L21/339

CPC分类号： H01L27/14812 ,  H01L27/14825

摘要： A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well and a second p-type well are formed on an N (100) silicon substrate. A vertical CCD n.sup.+ layer is formed in the second p-type well 3. Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate including an upper layer portion of the vertical CCD n.sup.+ layer to form a p.sup.- layer. An isolating portion for isolating photodiode portions from the vertical CCD n.sup.+ layer and a read control portion for controlling the read of charges from the photodiode n layer are simultaneously formed on a portion adjacent to the vertical CCD n.sup.+ layer.

摘要翻译： 具有如下结构的固体摄像装置，即使像素部分变得更细，在垂直CCD部分中转印电荷量也不会减少的结构，以及制造固态图像拾取装置的方法 被提供。 在N（100）硅衬底上形成第一p型阱和第二p型阱。 在第二p型阱3中形成垂直CCD n +层。然后，将杂质离子注入到包括垂直CCD n +层的上层部分的N（100）硅衬底的表面层中， 层。 与垂直CCD n +层隔离光电二极管部分的隔离部分和用于控制从光电二极管n层读取电荷的读取控制部分同时形成在与垂直CCD n +层相邻的部分上。

公开(公告)号：US4630091A

公开(公告)日：1986-12-16

申请号：US601928

申请日：1984-04-19

申请人： Takao Kuroda ,  Shigenori Matsumoto ,  Kenju Horii ,  Takahiro Yamada

发明人： Takao Kuroda ,  Shigenori Matsumoto ,  Kenju Horii ,  Takahiro Yamada

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14609

摘要： Photoelectric transducing elements are formed in a first impurity-doped region (14), and signal charge reading-out circuits (2, 3) are formed in a second impurity-doped region which is deeper than the first impurity-doped region, so that fixed pattern noise is drastically reduced, improving picture quality.

摘要翻译： 光电转换元件形成在第一杂质掺杂区域（14）中，并且信号电荷读出电路（2,3）形成在比第一杂质掺杂区域更深的第二杂质掺杂区域中，使得 固定图案噪声大大降低，提高图像质量。

公开(公告)号：US20080012048A1

公开(公告)日：2008-01-17

申请号：US11570658

申请日：2005-12-14

申请人： Takao Kuroda

发明人： Takao Kuroda

IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/76

CPC分类号： H01L27/14689 ,  H01L27/14806 ,  H01L29/76833

摘要： In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.

摘要翻译： 在包括通过绝缘层3设置在半导体衬底1上的转移电极2a至2c的结构的半导体器件10中，具有第一导电类型的第一半导体区域4，导电类型的第二半导体区域5 第一导电类型的第三半导体区域6以及直接位于转移电极2a至2c下方的与半导体衬底1的区域重叠的位置。 第二半导体区域5形成在第一半导体区域4上。 第三半导体区域6形成在第二半导体区域5上，使得当第三半导体区域6被耗尽时第二半导体区域5的电位的最大点8的位置比第三半导体区域5的第三半导体区域5的最大点8的位置更深 半导体区域6不存在。

公开(公告)号：US20060119725A1

公开(公告)日：2006-06-08

申请号：US11332885

申请日：2006-01-17

申请人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

发明人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

IPC分类号： H04N5/335

CPC分类号： H04N5/3728 ,  H04N5/357 ,  H04N5/3597

摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

摘要翻译： 在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤， 低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压， 施加高电压。

公开(公告)号：US5837565A

公开(公告)日：1998-11-17

申请号：US450621

申请日：1995-05-25

申请人： Takao Kuroda ,  Yasuhiro Shiraki

发明人： Takao Kuroda ,  Yasuhiro Shiraki

IPC分类号： H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L29/201 ,  H01L29/205 ,  H01L29/778 ,  H01L29/80

CPC分类号： H01L29/205 ,  H01L29/7783 ,  Y10S438/938

摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.

公开(公告)号：US5315137A

公开(公告)日：1994-05-24

申请号：US790782

申请日：1991-11-12

申请人： Masaji Asaumi ,  Takao Kuroda

发明人： Masaji Asaumi ,  Takao Kuroda

IPC分类号： H01L21/339 ,  H01L29/423 ,  H01L29/768 ,  H01L29/796

CPC分类号： H01L29/66954 ,  H01L29/42396 ,  H01L29/76833 ,  H01L29/76858

摘要： The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufacturing and a method of driving such device. In the charge transfer device of the invention, the n.sup.- diffusion layer is formed on the semiconductor substrate. In the surface region of the n.sup.- diffusion layer, a plurality of n diffusion layers are formed at equal intervals. The interval of the adjacent n diffusion layers is about 5 to 10 .mu.m. On the n.sup.- diffusion layer, an insulation film is formed. On the insulation film, transfer electrodes having two different shapes are formed. The transfer electrodes of these two types are alternately arranged. These transfer electrodes differ in length. The length of the longer transfer electrodes is about twice the length of the shorter transfer electrodes. Furthermore, the right end of the n diffusion layer nearly coincides with the right end of the longer transfer electrodes formed on the gate oxide film in the spatial position.

摘要翻译： 本发明涉及一种电荷转移装置，其具有高的转印效率而不会离开信号电荷，电荷转移装置基本上缩短了栅极长度，从而提高了传送速度，以及一种制造方法和驱动该装置的方法。 在本发明的电荷转移装置中，在半导体衬底上形成n-扩散层。 在n扩散层的表面区域中，以等间隔形成多个n个扩散层。 相邻n个扩散层的间隔约为5〜10μm。 在n-扩散层上形成绝缘膜。 在绝缘膜上形成具有两种不同形状的转印电极。 这两种类型的转移电极交替排列。 这些转移电极的长度不同。 较长的传输电极的长度约为短传输电极长度的两倍。 此外，n扩散层的右端几乎与在空间位置上形成在栅极氧化膜上的较长传输电极的右端重合。

公开(公告)号：US4783702A

公开(公告)日：1988-11-08

申请号：US921493

申请日：1986-10-22

申请人： Yoshiaki Sone ,  Takao Kuroda

发明人： Yoshiaki Sone ,  Takao Kuroda

IPC分类号： H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/3725 ,  H04N5/3728 ,  H04N3/14

CPC分类号： H04N3/1568

摘要： A solid state image sensing device which transfers unnecessary signal charges accumulated at photoelectric conversion devices by a first charge pulse in a vertical blanking period to vertical transferring means and throws out the unnecessary signal charges using throw-away means. The necessary signal charges accumulated in the photoelectric conversion devices in such period after the first charge pulse are transferred by a second charge pulse to the vertical transferring means, a horizontal transferring means and a signal detecting means, thereby to issue a video signal.

摘要翻译： 一种固态图像感测装置，其将在光电转换装置中积累的不必要的信号电荷通过垂直消隐期间的第一充电脉冲传送到垂直传送装置，并且使用丢弃装置来抛出不必要的信号电荷。 在将第一充电脉冲通过第二充电脉冲传送到垂直传送装置，水平传送装置和信号检测装置之后的这段时间内累积在光电转换装置中的必要信号电荷，从而发出视频信号。