摘要:
An imaging apparatus includes: a light reception unit that receives a light emission signal from a transmission apparatus via a pixel; a detection unit that detects whether or not an output based on the light emission signal received by the light reception unit is a first threshold value or more; and a correction unit that corrects a luminance of the pixel when the output based on the light emission signal is the first threshold value or more based on a result detected by the detection unit.
摘要:
A solid-state imaging device includes a pixel including a photoelectric conversion element, a floating diffusion layer, a transfer transistor, a reset transistor, and an amplifier transistor, and a control unit configured to supply a first voltage to a gate of the reset transistor when the charges are accumulated in the photoelectric conversion element, the first voltage being set between a second voltage and a third voltage; subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer, and subsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.
摘要:
A solid-state imaging device capable of reducing an area of a chip, capable of realizing both reduction of voltage and prevention of inversion video noise and consequently capable of realizing a higher image quality having a pixel portion and a clipping circuit capable of clipping a pixel readout voltage in accordance with a clipping voltage, wherein the pixel includes a photo-electric conversion element PD, a transfer element capable of transferring a charge accumulated in the photo-electric conversion element in a transfer period, a floating diffusion FD to which the charge accumulated in the photo-electric conversion element is transferred through a transfer element, a source-follower element which converts the charge in the floating diffusion to a voltage signal in accordance with a charge quantity, and a reset element which resets the floating diffusion to a predetermined potential in a resetting period, and the clipping circuit is arranged in an ineffective region of the pixel portion, a driving method for the same, and an electronic apparatus.
摘要:
An image sensor may include an array of image pixels arranged in rows and columns. Image pixels arranged along the same column may be coupled to a column line. The column line may be coupled to anti-eclipse control circuitry. In one suitable arrangement, the anti-eclipse control circuitry may include a data converter and an eclipse condition judgment circuit. The eclipse condition judgment circuit may be configured to record pixel output values at different points in time and to compare the recorded data to a predetermined threshold to determine whether an eclipse condition is satisfied. In another suitable arrangement, the anti-eclipse control circuitry may include a comparator and an eclipse condition judgment circuit. The comparator may compare a temporarily elevated pixel output value to a reference voltage to determine whether the eclipse condition is satisfied. In either arrangement, a maximum pixel level may be output when the eclipse condition is met.
摘要:
Each pixel has a photoelectric conversion unit configured to convert light into electrical charges and to store the electrical charges, an amplifying unit configured to amplify a signal based on the electrical charges stored in the photoelectric conversion unit and to output the signal to an output line, and a reset unit configured to reset a input part of the amplifying unit. A clip unit, which is configured to limit an electric voltage of the output line, includes an amplifying circuitry for amplifying a signal based on the electric voltage of the output line and an MOS transistor for limiting the electric voltage of the output line based on the difference in electric potential between the gate and source. The clip unit controls the electric potential of the gate of the MOS transistor by the amplifying circuitry.
摘要:
A plurality of pixels PX include effective pixels and optical black pixels. Signal lines VL are provided corresponding to each column of the pixels PX and supplied with output signals of the pixels PX of the corresponding column. Clip transistors CL are provided corresponding to the respective signal lines VL and limit a potential of the corresponding vertical signal lines VL based on a gate potential. At least in a predetermined operating mode, a potential Vclip_dark is supplied to a gate of one of the clip transistors CL corresponding to at least one pixel column formed of the optical black pixels when reading a noise level from the pixels PX corresponding to the clip transistors CL and when reading a data level from the pixels PX corresponding to the clip transistors CL.
摘要:
Disclosed is a solid-state imaging device including a pixel array, a pixel signal generation part, and a control part. The pixel signal generation part includes a comparator and a counter. In a case where an enable signal is supplied from the control part, a count value of the counter in a D-phase period where a signal level is detected is set as a limit value regardless of an output of the comparator when a count value of the counter in a P-phase period where a reset level is detected is a limit value.
摘要:
A solid-state imaging apparatus includes a plurality of pixels arranged two-dimensionally in a matrix, a reference signal generating circuit adapted to generate a ramp signal, a counter circuit adapted to perform a counting operation according to output of the ramp signal, comparators arranged on a column by column basis and adapted to compare signals read out of the pixels with the ramp signal, and memories arranged on a column by column basis and adapted to store digital data, wherein if output of the comparator is not changed during an AD conversion period, digital data of a predetermined value is stored in the memory. The solid-state imaging apparatus implements overflow handling using a simplified circuit configuration.
摘要:
A solid-state imaging device includes: a pixel section having pixels performing photoelectric conversion arranged in a matrix form; a pixel signal reading unit including an AD converting part that reads pixel signals in a unit of pixels, and compares a reference signal as a ramp waveform with the pixel signals to perform AD conversion; a clamp unit clamping the signal line with a clamp voltage such that the pixel signals are held at or greater than a set voltage; a correction bias circuit generating a clamp voltage according to a clamp voltage set value supplied and supplies the clamp voltage to the clamp unit; and a correction bias selecting unit selecting the clamp voltage set value such that the clamp voltage is generated in association with slope determining information for determining a slope of the reference signal, and supplies the clamp voltage set value to the correction bias circuit.
摘要:
An imager includes a column line connected to a pixel array for providing a pixel output signal. The pixel output signal is sampled during reset and readout phases. An analog-to-digital converter (ADC), which is coupled to the column line, samples the pixel output signal and provides a digital output signal. The ADC is configured to sample the pixel output signal twice, during the reset phase, in order to detect eclipse in the pixel output signal. The ADC includes a comparator, sequentially operated by a reset control, for comparing a first pixel output voltage and a second pixel output voltage, respectively, during the reset phase. The comparator is configured to provide an output bit indicating detection of an eclipse, based on a difference between the first and second pixel output voltages.