公开(公告)号：US06221703B1

公开(公告)日：2001-04-24

申请号：US09352749

申请日：1999-07-14

申请人： Chih-Cheng Liu ,  Chin-Hui Lee

发明人： Chih-Cheng Liu ,  Chin-Hui Lee

IPC分类号： H10L21339

CPC分类号： H01L29/1033 ,  H01L21/2652

摘要： The invention relates to an ion implantation method for adjusting the threshold voltage of MOS transistors. The MOS transistor is employed in a DRAM (dynamic random access memory) memory cell in a semiconductor wafer and comprises a substrate, a gate insulating layer positioned on the substrate, and a gate conducting layer with a rectangular-shaped cross section positioned on the gate insulating layer. The method comprises performing an ion implantation process at a predetermined dosage and ion energy to implant dopants through the gate conducting layer and gate insulating layer and deposit the dopants into the superficial portion of the substrate below the gate insulating layer.

摘要翻译： 本发明涉及用于调整MOS晶体管的阈值电压的离子注入方法。 MOS晶体管用于半导体晶片中的DRAM（动态随机存取存储器）存储单元，并且包括基板，位于基板上的栅极绝缘层和位于栅极上的矩形横截面的栅极导电层 绝缘层。 该方法包括以预定剂量和离子能量进行离子注入工艺以通过栅极导电层和栅极绝缘层注入掺杂剂，并将掺杂剂沉积到栅极绝缘层下方的衬底的表面部分中。